Curriculum Vitae of Dr. Simon M. Sze

Dr. Simon M. Sze received his B. S. degree from the National Taiwan University, M. S. from the University of Washington, and Ph. D. from Stanford University, all in Electrical Engineering.

Dr. Sze was with Bell Telephone Laboratories from 1963 to 1989 as a member of the Technical Staff. He joined the National Chiao Tung University (NCTU) from 1990 to 2006 as a Distinguished Professor. At present, he is a Consulting Professor of Stanford University and an Honorary Chair Professor of NCTU. Dr. Sze has served as a visiting professor to many academic institutions including the University of Cambridge, Delft University, the University of Hong Kong, Jilin University, and Swiss Federal Institute of Technology.

He has made fundamental and pioneering contributions to semiconductor devices, especially the metal-semiconductor contacts, microwave devices, and submicron MOSFET technology. Of particular importance is his co-invention of the nonvolatile semiconductor memory (NVSM) which has subsequently given rise to a large family of memory devices including the Flash memory and the EEPROM. The NVSM has ushered in the “Digital Age” and enabled the development of numerous advanced electronic systems such as the cellular phone, notebook computer, personal digital assistant, digital camera, digital television, smart IC card, electronic book, portable DVD, MP3 music player, automatic braking system and global positioning system.

Dr. Sze has authored or coauthored over two hundred technical papers. He has written and edited 14 books. His book “ Physics of Semiconductor Devices ” ( Wiley, 1969; 2nd Ed, 1981; 3rd Ed, 2007 ) is one of the most cited works in contemporary engineering and applied science publications ( over 16,000 citations according to ISI Press ). Dr. Sze has received the IEEE J. J. Ebers Award, the Sun Yet-sen Award, the National Endowed Chair Professor Award, and the National Science and Technology Prize. He is a Life Fellow of IEEE, an Academician of the Academia Sinica, a foreign member of the Chinese Academy of Engineering, and a member of the US National Academy of Engineering.

Curriculum Vitae of Dr. Simon M. Sze

I.  Education

1957 B.S. National Taiwan University Electrical Engineering.

1960 M.S. University of Washington Electrical Engineering.

1963 Ph.D Stanford University Electrical Engineering.

II.  Positions Held

1963-1989 Bell Telephone Laboratories Member of Tech. Staff

1990-2006 National Chiao Tung University Distinguished Professor

2006-present National Chiao Tung University Honorary Chair Professor

2006-present Stanford University Consulting Professor

1968-1969 National Chiao Tung University C.Y. Tung Chair Professor

1974-1977 National Taiwan University Special Chair Professor

1980-1984 Solid State Electronics Associate Editor

1984-1986 IEEE Electron Device Letters Associate Editor

1985 Cambridge University Visiting Professor

1986 Swiss Federal Institute of Tech. Visiting Professor

1986-1990 IEEE Electron Device Letters Editor-in-Chief

1991 Delft University Visiting Professor

2009 Beijing Jiaotong University Visiting Professor

2009 Tokyo Institute of Technology Visiting Professor

III.  Industrial & Academic Affiliations

1974-1977 Industrial Technology Research Institute Consultant

1974-1978 National Science Council Consultant

1990-1996 Microelectronic and Information Science Director

Research Center, National Chiao Tung Univ.

1998-2004 National Nano-Device Laboratories, Director

National Science Council

1999-2008 Industrial Technology Research Institute Technical Advisor

2004-present National Nano-Device Laboratories, Consultant

National Science Council

IV.  Key Patents ( of 23 total )

• “Surface Barrier Semiconductor Technology Device”, with C.R.Crowell, US Patents

3349297(1964).

• “Method of Making Contact Electrodes to Silicon Gate, Source and Drain Regions

of a Semiconductor Device”, with M. P. Lepselter, US Patent 4343082 (1980).

• “Semiconductor-on-Insulator (SOI) Devices and SOI IC Fabrication Method”, with K.

K. Ng, US Patent 4763183 (1986).

• “Light Emitting Diode with High Luminance and Method for Making the Same”, with

S. H. Chen, et al., US Patent 64448584 (2000).

• “Nanocrystal Floating Gate and Method of Manufacturing”, with T. C. Chang, et al.,

ROC Patent I231531 (2005).

• “Non-volatile Memory Based on Quantum Dot Storage Cell and Method of Fabrication”,

with P. C. Liu, ROC Patent I232582 (2005).

• “Non-volatile Memory and Method of Manufacturing Floating Gate”, with T. C. Chang,

et al., US Patent 7235443 (2006).

V.  Key Publications ( of 14 books and over 200 technical papers )

A. Authored Books

• Physics of Semiconductor Devices, 812 pages, Wiley Interscience, New York, 1969.

• Semiconductor Devices: Physics and Technology, 2nd Ed., 564 pages, Wiley, New

York, 2002.

• Physics of Semiconductor Devices, 3rd Ed., with K.K.Ng, 815 pages, Wiley

Interscience, Hoboken, 2007.

B. Edited Books

• VLSI Technology, 2nd Ed., 672 pages, McGraw Hill, New York, 1988.

• Semiconductor Sensors, 550 pages, Wiley Interscience, New York, 1994.

• ULSI Devices, with C.Y. Chang, 729 pages, Wiley Interscience, New York, 2000.

C. Technical papers

• “Diffusion of Zinc and Tin in Indium Antimonide,” with L. Y. Wei, Phys. Rev., 124, 84 (1961).

• “Photoelectric Determination of the Image Force Dielectric Constant for Hot Electrons in Schottky Barriers,” with C. R. Crowell and D. Kahng, J. Appl. Phys., 35, 2534 (1964).

• “Avalanche Breakdown Voltages of Abrupt and Linearly Graded p-n Junctions in Ge, Si, GaAs, and GaP,” with G. Gibbons, Appl. Phys. Lett., 8, 111 (1966).

• “Current Transport in Metal–Semiconductor Barriers,” with C. R. Crowell, Solid State Electron, 9, 1035 (1966).

• “Current Transport and Maximum Dielectric Strength of Silicon Nitride,” J. Appl. Phys., 38, 2951 (1967).

• “A Floating Gate and Its Application to Memory Devices,” with D. Kahng, Bell Syst. Tech. J., 46, 1288 (1967).

• “Schottky Barrier Insulated-Gate Field-Effect Transistors,” with M. P. Lepselter, Proc. IEEE, 56, 1088 (1968).

• “Carrier Transport and Storage Effects in Au Ion Implanted SiO2 Structure,” with L. I. Chen and K. A. Pickar, Solid State Electron, 15, 979 (1972).

• “Formation of Ge Nanocrystals Embedded in Silicon-Oxygen-Nitride Layers,” with C. H. Tu et al., Appl. Phys. Lett., 89, 1 (2006).

• “A Novel Nanowire Channel Poly-Si TFT Functioned as Transistor and Nonvolatile SONOS Memory”, with S. C. Chen et al., IEEE Elec. Dev. Lett., 28, 809 (2007).

• “Formation of Cobalt-Silicide Nanocrystals in Ge-Doped Dielectric Layer for the Application of Nonvolatile Memory”, with C. W. Hu et al., Appl. Phys. Lett., 92, 152115 (2008).

• “Improvement of Charge-storage Characteristics of Mo Nanocrystal Memory by Double-layer Structure”, with. C. C. Lin et al., J. Electrochem. Soc., 1, 156 H276 (2009).

• “NiSiGe Nanocrystals for Nonvolatile Memory Devices”, with C.W. Hu et al., Appl. Phys. Lett., 94(6), 062102 (2009).

VI.  Honors

1960 Member of Sigma Xi Scholastic Honor Society

1972 Member of Phi Tau Phi Scholastic Honor Society

1977 Fellow of IEEE

1994 Academician, Academia Sinica

1995 Member, US National Academy of Engineering

1998 Foreign Member, Chinese Academy of Engineering

2007 Distinguished Alumnus of the National Taiwan University

VII.  Awards

1969 Dr. Sun Yet-Sun Award

1991 IEEE J. J. Ebers Awards

1996 National Endowed Chair Professor Award, Ministry of Education, ROC.

1998 National Science and Technology Prize, ROC.

2007 Lifetime Achievement Award, Ministry of Economic Affairs, ROC.