Prof. Antonio Terrasi
Prof. Antonio Terrasi
Curriculum Vitae
Contact
Prof.Antonio Terrasi
DepartmentofPhysicsandAstronomy
UniversityofCataniaTelephone:+390953785431
ViaS.Sofia64Fax:+39095330592
95123CataniaE-mail:
Italy
AreaofExpertise: Experimental Physics, Material Science, Semiconductors, Nanotechnology, Renewable Energy
RelevantEmploymentandEducationalHistory
Education
-Degree in Physics cum laude in1986 at the University of Catania
-Ph.D in Physics in 1990 at the University of Catania
-Several post-doctoral stages granted by the “Consortium for Microelectronics Research in Southern Italy” (Co.Ri.M.Me.) and by the “Sicilian Center for Nuclear and Matter Physics” (C.S.F.N.S.M.).
-Visiting Scientist at the University of Wisconsin-Madison (U.S.A.) in 1988, 1989 and 1990.
-Scientific Functionary at the EcolePolytechniqueFédérale de Lausanne (E.P.F.L.) in 1994
Employment
-Researcher at the National Council of Research (1995-1997).
-Assistant Professor at the University of Catania (1997-2005).
-Associate Professor of Experimental Physics at the University of Catania since 2005.
ResearchInterests
The research activity has regarded growth, modification, processing and characterization of several kind of materials (insulators, metals, semiconductors, superconductors) with a main interest in materials for Si-based microelectronics and photovoltaics. In particular:
•EXAFS and photoelectron spectroscopies (XPS) with synchrotron radiation and X-ray tubes;
•Electrical measurements of semiconductors and insulating thin films;
•Structural analysis by Rutherford Backscattering Spectometry (RBS);
•Structural analysis by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM);
•Physical vapor deposition of metals and semiconductors;
•Ion beam assisted deposition (IBAD);
•Molecular beam epitaxy of Si and SiGe alloys;
•Growth and characterization of ultra thin SiO2 films on Si and SiGe substrate;
•Growth and characterization of 3D SiGe and Ge nanostructures.
•Nanocavities induced in Si based materials by He+ ion implantation;
•Solid phase epitaxy of Si and SiGe.
•Si and Ge quantum dots and quantum wells confined in transparent matrices for photovoltaic applications.
•Transparent Conductive Oxides and innovative Transparent Conductive Materials for thin film photovoltaics.
-Synchrotron radiation has been extensively used during the visiting periods in Frascati (Italy) and in Wisconsin (S.R.C. in Madison). Recently, several experiments have been performed at the European Synchrotron Radiation Facility (E.S.R.F.) in France. At the present the main activity concerns the growth, modification and characterization of Si-based materials for microelectronics applications. Since 1999 he is head of a Molecular Beam Epitaxy (MBE) laboratory for semiconductor elements (Si, Ge, C) at the Departement of Physics and Astronomy of the university of Catania. He has been coordinator and participant of several projects funded by IstitutoNazionalediFisicadellaMateria (today CNR), by the Italian Ministry of Research and by STMicroelectronics. He has been principal investigator and consultant for two contracts with StMicroelectronics and Moncada Solar Equipment industries.
PublicationsSummary
85publishedrefereedpaperswithalmost 900 citations, 1 book chapter, manyconferenceproceedings,2 book editorial reviews.
SelectedPublicServiceActivities
•Coordinator of the Ph.D. course in Material Science at the University of Catania for 4 entire cycles (XVIII to XXI cycles)
•Co-Director of the International School “Materials for Renewable Energy” at the “EttoreMajorana Centre”, in Erice (Italy), since 2010.
•Referee of several International Scientific Journals
•Responsible contact for several National and International research projects
•Responsible contact for several collaboration contracts with industrial partners.
UniversityTeaching
Assistant Professor of:
•Laboratory of General Physics (mechanics and thermodynamics)
•StructureofMatter
Professor of:
•MicroelectronicsTechnology
•ThermodynamicsofSolids
•LaboratoryforPhysicsofMatter
•Nanotechnology
•ModernPhysicsfor quantum computing
•Material Science
•GeneralPhysics
ProfessionalAffiliations
Physical ItalianSociety,Italian Vacuum Society, Materials Research Society, European-Materials Research Society.
ListofReferredPublications
1)Irrera, A., Artoni, P., Fioravanti, V., Franzò, G., Fazio, B., Musumeci, P., Boninelli, S., Impellizzeri, G., Terrasi, A., Priolo, F., Iacona, F.
Visible and infrared emission from Si/Genanowires synthesized by metal-assisted wet etching
(2014) Nanoscale Research Letters, 9 (1), pp. 1-7.
2)Mirabella, S., Cosentino, S., Terrasi, A.
Synthesis and light absorption mechanism in Si or Genanoclusters for photovoltaics applications
(2014) Solid State Phenomena, 205-206, pp. 465-474.
3)Cosentino, S., Knebel, S., Mirabella, S., Gibilisco, S., Simone, F., Bracht, H., Wilde, G., Terrasi, A.
Light absorption in Genanoclusters embedded in SiO2: Comparison between magnetron sputtering and sol-gel synthesis
(2014) Applied Physics A: Materials Science and Processing, 116 (1), pp. 233-241.
4)Boscarino, S., Crupi, I., Mirabella, S., Simone, F., Terrasi, A.
TCO/Ag/TCO transparent electrodes for solar cells application
(2014) Applied Physics A: Materials Science and Processing, 116 (3), pp. 1287-1291.
5)Cosentino, S., Mirabella, S., Liu, P., Le, S.T., Miritello, M., Lee, S., Crupi, I., Nicotra, G., Spinella, C., Paine, D., Terrasi, A., Zaslavsky, A., Pacifici, D.
Role of Genanoclusters in the performance of photodetectors compatible with Si technology
(2013) ThinSolidFilms, 548, pp. 551-555.
6)Crupi, I., Boscarino, S., Torrisi, G., Scapellato, G., Mirabella, S., Piccitto, G., Simone, F., Terrasi, A.
Laser irradiation of ZnO:Al/Ag/ZnO:Almultilayers for electrical isolation in thin film photovoltaics
(2013) Nanoscale Research Letters, 8 (1), pp. 1-5.
7)Canino, M., Summonte, C., Allegrezza, M., Shukla, R., Jain, I.P., Bellettato, M., Desalvo, A., Mancarella, F., Sanmartin, M., Terrasi, A., Löper, P., Schnabel, M., Janz, S.
Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films
(2013) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 178 (9), pp. 623-629. Cited 4 times.
8)Mirabella, S., Cosentino, S., Failla, M., Miritello, M., Nicotra, G., Simone, F., Spinella, C., Franzò, G., Terrasi, A.
Light absorption enhancement in closely packed Ge quantum dots
(2013) Applied Physics Letters, 102 (19), art. no. 193105, . Cited 3 times.
9)Cosentino, S., Miritello, M., Crupi, I., Nicotra, G., Simone, F., Spinella, C., Terrasi, A., Mirabella, S.
Room-temperature efficient light detection by amorphous Ge quantum wells
(2013) Nanoscale Research Letters, 8 (1), pp. 1-7. Cited 3 times.
10)Valvo, M., Bongiorno, C., Giannazzo, F., Terrasi, A.
Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001)Si single crystal
(2013) Journal of Applied Physics, 113 (3), art. no. 033513, . Cited 1 time.
11)Liu, P., Le, S.T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Cosentino, S., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A.
Fast, high-efficiency Germanium quantum dot photodetectors
(2012) 2012 Lester Eastman Conference on High Performance Devices, LEC 2012, art. no. 6410978, .
12)Liu, P., Cosentino, S., Le, S.T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A.
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
(2012) Journal of Applied Physics, 112 (8), art. no. 083103, . Cited 7 times.
13)Mirabella, S., Cosentino, S., Gentile, A., Nicotra, G., Piluso, N., Mercaldo, L.V., Simone, F., Spinella, C., Terrasi, A.
Matrix role in Genanoclusters embedded in Si 3N 4 or SiO 2
(2012) Applied Physics Letters, 101 (1), art. no. 011911, . Cited 7 times.
14)Crupi, I., Boscarino, S., Strano, V., Mirabella, S., Simone, F., Terrasi, A.
Optimization of ZnO:Al/Ag/ZnO:Al structures for ultra-thin high-performance transparent conductive electrodes
(2012) Thin Solid Films, 520 (13), pp. 4432-4435. Cited 25 times.
15)Cosentino, S., Liu, P., Le, S.T., Lee, S., Paine, D., Zaslavsky, A., Pacifici, D., Mirabella, S., Miritello, M., Crupi, I., Terrasi, A.
High-efficiency silicon-compatible photodetectors based on Ge quantum dots
(2011) Applied Physics Letters, 98 (22), art. no. 221107, . Cited 10 times.
16)Summonte, C., Centurioni, E., Canino, M., Allegrezza, M., Desalvo, A., Terrasi, A., Mirabella, S., Di Marco, S., Di Stefano, M.A., Miritello, M., Lo Savio, R., Simone, F., Agosta, R.
Optical properties of silicon rich oxides
(2011) Physica Status Solidi (C) Current Topics in Solid State Physics, 8 (3), pp. 996-1001. Cited 2 times.
17)Cosentino, S., Mirabella, S., Miritello, M., Nicotra, G., Lo Savio, R., Simone, F., Spinella, C., Terrasi, A.
The role of the surfaces in the photon absorption in genanoclusters embedded in silica
(2011) Nanoscale Research Letters, 6 (1), pp. X1-7. Cited 17 times.
18)Mirabella, S., De Salvador, D., Bruno, E., Napolitani, E., Scapellato, G.G., Mastromatteo, M., Impellizzeri, G., Bisognin, G., Boninelli, S., Terrasi, A., Carnera, A., Priolo, F.
Recent insights in the diffusion of boron in silicon and germanium
(2010) ECS Transactions, 33 (11), pp. 167-178. Cited 1 time.
19)Crupi, I., Mirabella, S., D'Angelo, D., Gibilisco, S., Grasso, A., Di Marco, S., Simone, F., Terrasi, A.
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
(2010) Journal of Applied Physics, 107 (4), art. no. 043503, . Cited 4 times.
20)Bisognin, G., Vangelista, S., Mastromatteo, M., Napolitani, E., De Salvador, D., Carnera, A., Berti, M., Bruno, E., Scapellato, G., Terrasi, A.
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
(2010) Thin Solid Films, 518 (9), pp. 2326-2329. Cited 1 time.
21)Bruno, E., Mirabella, S., Scapellato, G., Impellizzeri, G., Terrasi, A., Priolo, F., Napolitani, E., De Salvador, D., Mastromatteo, M., Carnera, A.
Radiation enhanced diffusion of B in crystalline Ge
(2010) Thin Solid Films, 518 (9), pp. 2386-2389. Cited 5 times.
22)Mirabella, S., Agosta, R., Franzó, G., Crupi, I., Miritello, M., Lo Savio, R., Di Stefano, M.A., Di Marco, S., Simone, F., Terrasi, A.
Light absorption in silicon quantum dots embedded in silica
(2009) Journal of Applied Physics, 106 (10), art. no. 103505, . Cited 22 times.
23)Bruno, E., Mirabella, S., Scapellato, G., Impellizzeri, G., Terrasi, A., Priolo, F., Napolitani, E., De Salvador, D., Mastromatteo, M., Carnera, A.
Mechanism of B diffusion in crystalline Ge under proton irradiation
(2009) Physical Review B - Condensed Matter and Materials Physics, 80 (3), art. no. 033204, . Cited 14 times.
24)Pei, L., Duscher, G., Steen, C., Pichler, P., Ryssel, H., Napolitani, E., De Salvador, D., Piro, A.M., Terrasi, A., Severac, F., Cristiano, F., Ravichandran, K., Gupta, N., Windl, W.
Detailed arsenic concentration profiles at Si/ SiO2 interfaces
(2008) Journal of Applied Physics, 104 (4), art. no. 043507, . Cited 9 times.
25)D'Angelo, D., Mirabella, S., Bruno, E., Pulvirenti, G., Terrasi, A., Bisognin, G., Berti, M., Bongiorno, C., Raineri, V.
Role of C in the formation and kinetics of nanovoids induced by He + implantation in Si
(2008) Journal of Applied Physics, 104 (2), art. no. 023501, . Cited 2 times.
26)D'Angelo, D., Mirabella, S., Bruno, E., Terrasi, A., Bongiorno, C., Giannazzo, F., Raineri, V., Bisognin, G., Berti, M.
Localization of He induced nanovoids in buried Si1-xGe x thin films
(2008) Journal of Applied Physics, 103 (1), art. no. 016104, . Cited 5 times.
27)D'Angelo, D., Piro, A.M., Terrasi, A., Grimaldi, M.G., Mirabella, S., Bongiorno, C.
Interface roughening and defect nucleation during solid phase epitaxyregrowth of doped and intrinsic Si0.83 Ge0.17 alloys
(2007) Journal of Applied Physics, 101 (10), art. no. 103508, .
28)D'Angelo, D., Piro, A.M., Mirabella, S., Bongiorno, C., Romano, L., Terrasi, A., Grimaldi, M.G.
Amorphous-crystalline interface evolution during Solid Phase EpitaxyRegrowth of SiGe films amorphized by ion implantation
(2007) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 257 (1-2 SPEC. ISS.), pp. 270-274.
29)G. D'Arrigo, Severino, A., Leone, S., Mauceri, M., Abbondanza, G., Buongiorno, C., Terrasi, A., La Via, F.
Heteroepitaxial growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) substrates
(2006) ECS Transactions, 3 (5), pp. 287-298. Cited 2 times.
30)D'Acapito, F., Mobilio, S., Terrasi, A., Scalese, S., Franzó, G., Priolo, F.
Local order around Er3+ ions in thin silicon oxide layers grown in Si by MBE
(2005) PhysicaScripta T, T115, pp. 384-386.
31)Cerofolini, G.F., Galati, C., Giorgi, G., Motta, A., Reina, S., Renna, L., Terrasi, A.
Nearly flat, terraced, hydrogen-terminated, 1×1 (100) silicon prepared by high-temperature exposure to H2
(2005) Applied Physics A: Materials Science and Processing, 81 (4), pp. 745-751. Cited 11 times.
32)Napolitani, E., Di Marino, M., De Salvador, D., Camera, A., Spadafora, M., Mirabella, S., Terrasi, A., Scalese, S.
Silicon interstitial injection during dry oxidation of SiGe/Si layers
(2005) Journal of Applied Physics, 97 (3), art. no. 036106, . Cited 10 times.
33)Spadafora, M., Terrasi, A., Mirabella, S., Piro, A., Grimaldi, M.G., Scalese, S., Napolitani, E., Di Marino, M., De Salvador, D., Carnera, A.
Dry oxidation of MBE-SiGe films: Rate enhancement, Ge redistribution and defect injection
(2005) Materials Science in Semiconductor Processing, 8 (1-3 SPEC. ISS.), pp. 219-224. Cited 10 times.
34)D'Acapito, F., Mobilio, S., Scalese, S., Terrasi, A., Franzó, G., Priolo, F.
Structure of Er-O complexes in crystalline Si
(2004) Physical Review B - Condensed Matter and Materials Physics, 69 (15), art. no. 153310, pp. 153310-1-153310-4. Cited 21 times.
35)Mirabella, S., De Salvador, D., Napolitani, E., Giannazzo, F., Impellizzeri, G., Bisognin, G., Terrasi, A., Raineri, V., Berti, M., Carnera, A., Drigo, A.V., Priolo, F.
Self-interstitial diffusion and clustering with impurities in crystalline silicon
(2004) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 216 (1-4), pp. 80-89. Cited 1 time.
36)De Salvador, D., Napolitani, E., Mirabella, S., Impellizzeri, G., Priolo, F., Terrasi, A., Bisognin, G., Berti, M., Drigo, A.V., Carnera, A.
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy
(2004) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 216 (1-4), pp. 286-290. Cited 5 times.
37)Scalese, S., Mirabella, S., Terrasi, A.
XPS and RBS investigations of Si-Er-O interactions on a Si(1 0 0) -2×1 surface
(2003) Applied Surface Science, 220 (1-4), pp. 231-237. Cited 3 times.
38)Spadafora, M., Privitera, G., Terrasi, A., Scalese, S., Bongiorno, C., Carnera, A., Di Marino, M., Napolitani, E.
Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient
(2003) Applied Physics Letters, 83 (18), pp. 3713-3715. Cited 29 times.
39)Romano, L., Napolitani, E., Privitera, V., Scalese, S., Terrasi, A., Mirabella, S., Grimaldi, M.G.
Carrier concentration and mobility in B doped Si1-xGe x
(2003) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 102 (1-3), pp. 49-52. Cited 18 times.
40)Giannazzo, F., Mirabella, S., Raineri, V., De Salvador, D., Napolitani, E., Terrasi, A., Carnera, A., Drigo, A.V., Priolo, F.
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy
(2003) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 102 (1-3), pp. 148-151. Cited 1 time.
41)Cerofolini, G.F., Galati, C., Lorenti, S., Renna, L., Viscuso, O., Bongiorno, C., Raineri, V., Spinella, C., Condorelli, G.G., Fragalà, I.L., Terrasi, A.
The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions
(2003) Applied Physics A: Materials Science and Processing, 77 (3-4), pp. 403-409. Cited 35 times.
42)Colonna, S., Terrasi, A., Scalese, S., Iacona, F., Raineri, V., La Via, F., Mobilio, S.
Thermal oxidation of As and Ge implanted Si(1 0 0)
(2003) Surface Science, 532-535, pp. 746-753. Cited 6 times.
43)De Salvador, D., Napolitani, E., Mirabella, S., Giannazzo, F., Raineri, V., Bisognin, G., Berti, M., Carnera, A., Drigo, A.V., Terrasi, A., Priolo, F.
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon
(2003) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, pp. 922-926. Cited 2 times.
44)Giannazzo, F., Mirabella, S., De Salvador, D., Napolitani, E., Raineri, V., Carnera, A., Drigo, A.V., Terrasi, A., Priolo, F.
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si
(2002) Physical Review B - Condensed Matter and Materials Physics, 66 (16), art. no. 161310, pp. 1613101-1613104. Cited 7 times.
45)Terrasi, A., Scalese, S., Re, M., Rimini, E., Iacona, F., Raineri, V., La Via, F., Colonna, S., Mobilio, S.
Thermal oxidation of Si (001) single crystal implanted with Ge ions
(2002) Journal of Applied Physics, 91 (10 I), pp. 6754-6760. Cited 9 times.
46)Terrasi, A., Scalese, S., Adorno, R., Ferlito, E., Spadafora, M., Rimini, E.
Rapid thermal oxidation of epitaxial SiGe thin films
(2002) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89 (1-3), pp. 269-273. Cited 22 times.
47)Mirabella, S., Coati, A., De Salvador, D., Napolitani, E., Mattoni, A., Bisognin, G., Berti, M., Carnera, A., Drigo, A.V., Scalese, S., Pulvirenti, S., Terrasi, A., Priolo, F.
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism
(2002) Physical Review B - Condensed Matter and Materials Physics, 65 (4), art. no. 045209, pp. 452091-4520912. Cited 74 times.
48)Mirabella, S., Scalese, S., Terrasi, A., Priolo, F., Coati, A., De Salvador, D., Napolitani, E., Berti, M.
Self-interstitials and substitutional C in silicon: Interstitial-trapping and C-clustering
(2002) Materials Research Society Symposium - Proceedings, 717, pp. 219-224.
49)Mirabella, S., Coati, A., Scalese, S., De Salvador, D., Pulvirenti, S., Bisognin, G., Napolitani, E., Terrasi, A., Berti, M., Carnera, A., Drigo, A.V., Priolo, F.
Suppression of boron transient enhanced diffusion by C trapping
(2002) Solid State Phenomena, 82-84, pp. 195-200. Cited 3 times.
50)Re, M., Scalese, S., Mirabella, S., Terrasi, A., Priolo, F., Rimini, E., Berti, M., Coati, A., Drigo, A., Carnera, A., De Salvador, D., Spinella, C., La Mantia, A.
Structural characterisation and stability of Si1-xGex/Si(1 0 0) heterostructures grown by molecular beam epitaxy
(2001) Journal of Crystal Growth, 227-228, pp. 749-755. Cited 4 times.
51)Scalese, S., Franzò, G., Mirabella, S., Re, M., Terrasi, A., Priolo, F., Rimini, E., Carnera, A.
Si:Er:O layers grown by molecular beam epitaxy: Structural, electrical and optical properties
(2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 81 (1-3), pp. 62-66. Cited 3 times.
52)Scalese, S., Franzò, G., Mirabella, S., Re, M., Terrasi, A., Priolo, F., Rimini, E., Spinella, C., Carnera, A.
Effect of O:Er concentration ratio on the structural, electrical, and optical properties of Si:Er:O layers grown by molecular beam epitaxy
(2000) Journal of Applied Physics, 88 (7), pp. 4091-4096. Cited 20 times.
53)Terrasi, A., Priolo, F., Franzò, G., Coffa, S., D'Acapito, F., Mobilio, S.
EXAFS analysis of Er sites in Er-O and Er-F co-doped crystalline Si
(1998) Journal of Luminescence, 80 (1-4), pp. 363-367. Cited 7 times.
54)Terrasi, A., Rimini, E., Raineri, V., Iacona, F., La Via, F., Colonna, S., Mobilio, S.
Precipitation of As in thermally oxidized ion-implanted Si crystals
(1998) Applied Physics Letters, 73 (18), pp. 2633-2635. Cited 8 times.
55)Iacona, F., Raineri, V., La Via, F., Terrasi, A., Rimini, E.
Arsenic redistribution at the SiO2/Si interface during oxidation of implanted silicon
(1998) Physical Review B - Condensed Matter and Materials Physics, 58 (16), pp. 10990-10999. Cited 15 times.
56)Lombardo, S., Crupi, F., La Magna, A., Spinella, C., Terrasi, A., La Mantia, A., Neri, B.
Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors
(1998) Journal of Applied Physics, 84 (1), pp. 472-479. Cited 47 times.
57)Ivanèo, J., Horváth, Zs.J., Van Tuyen, V., Coluzza, C., Almeida, J., Terrasi, A., Pécz, B., Vincze, Gy., Margaritondo, G.
Electrical characterization of Au/SiOx/n-GaAs junctions
(1998) Solid-State Electronics, 42 (2), pp. 229-233. Cited 3 times.
58)Terrasi, A., La Via, F., D'Acapito, F., Mobilio, S.
EXAFS investigation of Co sites in CoSi2 film grown by ion beam assisted deposition
(1997) Vide: Science, Technique et Applications, 53 (283 SUPPL.), pp. 189-190.
59)Terrasi, A., Marsi, M., Berger, H., Margaritondo, G., Kelley, R.J., Onellion, M.
Reply to "Comment on 'Temperature dependence of electronic states in (TaSe4)2I'"
(1997) Physical Review B - Condensed Matter and Materials Physics, 56 (19), pp. 12647-12648. Cited 4 times.
60)Terrasi, A., La Via, F., D'Acapito, F., Mobilio, S.
EXAFS investigation of Co sites in CoSi2 film grown by ion beam-assisted deposition
(1997) Microelectronic Engineering, 37-38, pp. 491-497. Cited 3 times.
61)Terrasi, A., Franzò, G., Coffa, S., Priolo, F., D'Acapito, F., Mobilio, S.
Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si
(1997) Applied Physics Letters, 70 (13), pp. 1712-1714. Cited 71 times.
62)Almeida, J., Coluzza, C., Dell'Orto, T., Margaritondo, G., Terrasi, A., Ivanco, J.
Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer
(1997) Journal of Applied Physics, 81 (1), pp. 292-296. Cited 12 times.
63)Terrasi, A., Marsi, M., Berger, H., Gauthier, F., Forro, L., Margaritondo, G., Kelley, R.J., Onellion, M.
Incomplete charge-density-wave gap opening in orthorhombic Mo4O11
(1996) Zeitschrift fur Physik B-Condensed Matter, 100 (4), pp. 493-496. Cited 9 times.
64)Terrasi, A., Almeida, J., Coluzza, C., Margaritondo, G.
Silicon oxide thin films obtained by Ar+ bombardment of Si(100) in oxygen atmosphere at room temperature
(1996) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 116 (1-4), pp. 416-419. Cited 8 times.
65)Fanfoni, M., Goletti, C., Chiaradia, P., Ng, W., Cerrina, F., Hwu, Y., Terrasi, A., Margaritondo, G.
Schottky barrier at the Au/Gap (110) interface
(1996) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 14 (4), pp. 2433-2436. Cited 2 times.
66)Berger, H., LaRosa, S., Terrasi, A., Marsi, M., Collins, I., Kelley, R.J., Quitmann, C., Ma, J., Kendziora, C., Skelton, E., Onellion, M., Margaritondo, G.
Progress in understanding VUV photoemission in low-dimensionality systems
(1996) Journal of Electron Spectroscopy and Related Phenomena, 78, pp. 431-436.
67)Terrasi, A., Marsi, M., Berger, H., Margaritondo, G., Kelley, R.J., Onellion, M.
Temperature dependence of electronic states in (TaSe4)2I
(1995) Physical Review B, 52 (8), pp. 5592-5597. Cited 25 times.
68)Terrasi, A., Coluzza, C., Margaritondo, G.
Ar+ bombardment of Si(100) in oxygen atmosphere: Room temperature oxide formation studied by x-ray photoelectron spectroscopy
(1995) Journal of Applied Physics, 78 (6), pp. 3820-3823. Cited 4 times.
69)DellOrto, T., Almeida, J., Terrasi, A., Marsi, M., Coluzza, C., Margaritondo, G., Perfetti, P.
Anomalous Au/Si barrier modification by a CaF2 intralayer
(1994) Physical Review B, 50 (24), pp. 18189-18193. Cited 6 times.
70)Armelao, L., Terrasi, A., Boaro, M., Ravesi, S., Granozzi, G.
X-ray photoelectron spectroscopy and scanning electron microscopy of β-FeSi2 films grown by ion beam assisted deposition
(1994) Surface and Interface Analysis, 22 (1), pp. 36-40. Cited 3 times.
71)Terrasi, A., Ravesi, S., Spinella, C., Grimaldi, M.G., La Mantia, A.
Morphological and structural studies of β-FeSi2 films grown by ion beam assisted deposition
(1994) Thin Solid Films, 241 (1-2), pp. 188-191. Cited 3 times.
72)Terrasi, A., Ravesi, S., Grimaidi, M.G., Spinella, C.
Ion beam assisted growth of β-FeSi2
(1994) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 12 (2), pp. 289-294. Cited 7 times.
73)Grimaldi, M.G., Franzò, G., Ravesi, S., Terrasi, A., Spinella, C., La Mantia, A.
Formation of epitaxial γ-FeSi2 and β-FeSi2 layers on (111) Si
(1994) Applied Surface Science, 74 (1), pp. 19-26. Cited 4 times.
74)Ravesi, S., Terrasi, A., La Mantia, A.
Surface morphology and epitaxy of β-FeSi2 obtained by ion beam assisted growth
(1993) Nuclear Inst. and Methods in Physics Research, B, 80-81 (PART 2), pp. 1371-1375. Cited 2 times.
75)Ravesi, S., Terrasi, A., Torrisi, L., Foti, G.
Electronic structure of 0.5 keVAr+ irradiated graphite
(1993) Radiation Effects and Defects in Solids, 127 (2), pp. 137-145. Cited 1 time.
76)Terrasi, A., Ravesi, S., Grimaldi, M.G., Spinella, C.
Epitaxy enhancement of β-FeSi2 grown by ion beam assisted deposition
(1993) Applied Physics Letters, 62 (17), pp. 2102-2104. Cited 6 times.