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Background Statement for SEMI Draft Document 5775A
New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers
Notice: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.
Notice: Recipients of this Document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.
Background Statement
Sapphire single crystal ingot is used as a substrate material for manufacturing HB-LED wafers. Despite the importance of sapphire single crystal ingot, however, there currently is no industry-consensus standard in LED industry for sapphire single crystal ingot. Such a standard would improve communication between users and suppliers, reduce costs, and increase productivity, so it is critical for the LED industry to come to consensus in the near future.
Review and Adjudication Information
Task Force Review / Committee AdjudicationGroup: / Sapphire Single Crystal Ingot Task Force / HB-LEDChina TC Chapter
Date: / TBD / Oct. 14th , 2016
Time & Timezone: / TBD / 9AM—4PM, Beijing time
Location: / TBD / Friend Plaza Hotel Dandong
City, State/Country: / China / Dandong, Liaoning, China
Leader(s): / Zijian An (Aurora) / Yong Ji(GHTOT),
WeizhiCai(SANAN)
Standards Staff: / Sophia Huang(SEMI China) / Sophia Huang (SEMI China)
Meeting date and time are subject to change, and additional TF review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.Check for the latest schedule.
If you have any questions, please contact the Sapphire Single Crystal Ingot Task Force.
ZijiangAn (Aurora)
Tel: +86 18686756800/15765576610
E-mail:
Or contact SEMI Staff, Sophia
SEMI Draft Document 5775A
New Standard: Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers
1 Purpose
1.1 Thepurpose of this standard is to standardize the specification of sapphire single crystal ingot intended for use for manufacturing HB-LED wafers.
2 Scope
2.1 This specification is mainly about the requirements for key parameters and the defects of sapphire single crystal ingots.
2.2 The key parameters include the ingot diameter, reference plane width, end face orientation, reference plane orientation, verticality, roundness, straightness, surface roughness.
2.3 The defects need to be deducted include bubbles and cloud,surface scratch, crack, chip.
NOTICE:SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.
3 Referenced Standards and Documents
3.1 None.
4 Terminology
4.1 Abbreviations and Acronyms
4.1.1 D— Diameter
4.1.2 W—Reference PlaneWidth
4.2 Definitions
4.2.1 Reference Plane —The plane which is vertical to the end face of ingot, and defined as the orientation flat after cutting into wafers.
5 Ordering Information
5.1 Purchase orders for sapphire ingot provided under this specification shall include the following items. These items are indicated on the sapphire ingot specification format , shown in table1.
5.1.1 Diameter (D), Reference Plane Width (W) (The positions on ingot are shown in Figure 1).
5.1.2 End Face andReference Plane Orientation.
5.1.3 Total effective length of sapphire ingot after deducting defects.
5.2 The following items may be specified optionally in addition to those listed in Paragraph 5.1:
5.2.1 Verticality, Roughness, Roundness,Straightness.
5.2.2 The limitation for the length percentage of ingot with defects.
5.2.3 Acceptable defect size such as surfacescratch, bubble and cloud, chip and crack.
5.3 The specific measurement methods ofabove items are to be agreed by customer and supplier.
Table1 Sapphire Ingot Specification Format
NO. / ITEM / SPECIFICATION / MEASUREMENT METHOD5.1.1 / Diameter (D) / Nominal [ ]±Tolerance mm / as mutually agreed by customer and supplier
Reference Plane Width(W)
5.1.2 / End Face Orientation / C-plane(0001)'±[ ]º
Reference Plane Orientation / A-plane(11-20)±[ ]º
5.1.3 / Total Effective Length / [ ]mm
Figure 1
The Positions of D and WonIngot
6 Requirements
6.1 2 inch sapphire ingot specification
No / Property / Specification / Tolerance / Units1 / Physical Specification / Diameter / 50.90 / ±0.10 / mm
2 / Reference plane width / 16 / ±1 / mm
3 / Orientation / End face orientation / C-Plane(0001) / ±0.1 / degrees
4 / Reference plane orientation / A-Plane(11-20) / ±0.2 / degrees
5 / Shape / Roundness / ≤0.02 / mm
6 / Straightness / ≤0.03 / mm
7 / Verticality / The angle between the ingot end face and the reference plane / 90 / ±0.1 / degrees
The angle between the ingot end face and the ingot body / 90 / ±0.2 / degrees
8 / Surface Roughness (Ra) / ＜1.0 / µm
9 / Defects / Bubble and Cloud / The total length of the bubble and cloud should be less than 10% of the ingot length.
10 / Chip / The length of each chip along the ingot axis direction should be ≤ 1.5 mm.
11 / Crack / The length of each crack along the ingot axis directionshould be ≤ 3 mm, and the crack paralleling to end surface is rejected
12 / Surface Scratch / Transverse scratches of length< 5mm paralleling to ingot end surface are allowed, the scratches vertical to end surface are rejected
6.2 4 inch sapphire ingot specification
No / Property / Specification / Tolerance / Units1 / Physical Specification / Diameter / 100.10 / ±0.10 / mm
2 / Reference plane width / 30 / ±1 / mm
3 / Orientation / End face orientation / C-Plane(0001) / ±0.1 / degrees
4 / Reference plane orientation / A-Plane(11-20) / ±0.2 / degrees
5 / Shape / Roundness / ≤0.02 / mm
6 / Straightness / ≤0.03 / mm
7 / Verticality / The angle between the ingot end face and the reference plane / 90 / ±0.1 / degrees
The angle between the ingot end face and the ingot body / 90 / ±0.2 / degrees
8 / Surface Roughness (Ra) / ＜1.0 / µm
9 / Defects / Bubble and Cloud / The total length of the bubble and cloud should be less than 10% of the ingot length.
10 / Chip / The length of each chip along the ingot axisdirection should be ≤ 1.5 mm.
11 / Crack / The length of each crack along the ingot axis directionshould be ≤ 3 mm, and the crack paralleling to end surface is rejected
12 / Surface Scratch / Transverse scratches of length< 5mm paralleling to ingot end surface are allowed, the scratches vertical to end surface are rejected
6.3 6 inch sapphire ingot specification
No / Property / Specification / Tolerance / Units1 / Physical Specification / Diameter / 150.20 / ±0.10 / mm
2 / Reference plane width / 47 / ±1 / mm
3 / Orientation / End face orientation / C-Plane(0001) / ±0.1 / degrees
4 / Reference plane orientation / A-Plane(11-20) / ±0.2 / degrees
5 / Shape / Roundness / ≤0.04 / mm
6 / Straightness / ≤0.06 / mm
7 / Verticality / The angle between the ingot end face and the reference plane / 90 / ±0.1 / degrees
The angle between the ingot end face and the ingot body / 90 / ±0.2 / degrees
8 / Surface Roughness (Ra) / ＜1.0 / µm
9 / Defects / Bubble and Cloud / The total length of the bubble and cloud should be less than 10% of the ingot length.
10 / Chip / The length of each chip along the ingot axis directionshould be ≤ 1.5 mm.
11 / Crack / The length of each crack along the ingot axis directionshould be ≤ 3 mm, and the crack paralleling to end surface is rejected
12 / Surface Scratch / Transverse scratches of length< 5mm paralleling to ingot end surface are allowed, the scratches vertical to end surface are rejected
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