THEORY OF SEMICONDUCTOR DEVICES I.
Fall Semester-2017
Due November 18, 2017
Subject of the Paper: FINFET
Your Company has made a strategic decision to use the newly reported device technology, FinFET, to design and build it products of digital and analog systems. The company would like to have a report in the form of a research paper about this technology to be presented in the next executive meeting and in December, 2017.
You have been chosen to conduct this study and present it to the board of the company.
You need to submit a sections of the report on a weekly basis.
1-Introduction:Explain what is a FinFET. Provide a history of developing this device and why manufacturer became interested in this technology. If there are more than one type, explain their advantages and disadvantages. The goal of this section is to provide the board with an introductory information about this technology and convince them that this is (or is not) the right technology for your company. Due: October 21, 2017.
2-Device Operation: This section should show the different geometries of the devices, explain how each one works, and explain the difference between the different structures. The goal of this section is to show the board how the different structures work and what is the advantage of each, so they may choose the right technology. The goal of this section is to give a comprehensive explanation of how these devices operate based on the physics of materials.Due: October 28, 2017.
3-Analytical Equations and Analysis: In this section you should show the equations that govern the operation of these devices. This means you show the equations that govern all regions of operation. All parameters must be defined. All equations must be referenced. The goal of this section is to provide the board with the equations to check the performance of the devices and test their capabilities.Due: November 4, 2017.
4-Applications: This section should provide information about the applications of these devices in both Analog and Digital fields. After explaining what type of applications, give some examples of these applications with schematic, performance analysis, and your own evaluation compared to standard technology. The goal of this section is to convince the board of the usefulness of this technology by showing the different applications and the superiority of the performance to help them make a decision of adopting (or not adopting) this technology. Due: November 11, 2017.
5-Conclusions and Reference: In this section write a conclusion of your research. The conclusion should be used by you to persuade the readers (board) of adopting (or not adopting) this technology and state the reason for your opinion. For References: (a) all information should be referenced to the original authors. It is unethical to provide information without references. (b) References should be cited in all sections of the report (c) Wikipedia is not a peer review articles, so you should not use it or quote it. Only use peer review journals or conference. You may cite references that have cited in Wikipedia, but read that reference. Due: November 14, 2017.
Writing Format:
The paper format is the same as the IEEE format. Please see the “IEEE Conference Paper_template” document. There is an example of how to use the template provided as “Sample Paper” document. Use the font size and formatting as required by these documents. Any deviation is not acceptable.
How to start?
Search for papers in this area of FinFET and related areas. Our library has subscriptions to many journals, but you can get any paper either from Google scholars, the internet, or the interlibrary loans. You must do the literature in the first few days of the first week to be able to write the introduction.
Plagiarism
You must not copy any statement from another source. This is considered Plagiarism You should rewrite the statements using your own words. This can be done if you study the whole section section, understand it, then rewrite it as a section. Trying rewrite individual sentences will be hard.