INVITED
Discrete Carbon Nanotube Diodes
K.A. Bosnick1, N.M. Gabor2, Z. Zhong2, J. Park2, and P.L. McEuen2
1National Institute for Nanotechnology, National Research Council Canada,
Edmonton AB T6G 2M9, Canada
2Cornell University, USA
Corresponding author email:
Individual, discrete carbon nanotubes have been studied extensively as the active channel in CNT field-effect transistors for many years now. More recently, this device concept was generalized to a 3-gate, 5-terminal device that can be dynamically and reversibly configured as a FET, a PN tunnelling diode, or a PIN thermal diode [1,2]. Variable-temperature transport measurements under different gating conditions reveal nearly ideal thermal diode behaviour in the PIN configuration [2]. Comparison to theory for a one-dimensional diode yields the band gap of the CNT and the transmission coefficient through the junction. In the PN configuration, the device “leaks” under both forward and reverse bias, likely due to increased tunnelling across the shorter depletion region. In reverse bias, the breakdown voltage depends weakly on temperature and nanotube diameter. The generation of photocurrent in the PIN configuration under laser illumination has also been studied [3]. Spatially resolved photocurrent imaging confirms the current is generated in the junction region of the device. “Steps” are seen in the I-V curves under illumination and reverse bias, and are tentatively attributed to the effects of impact ionization. These devices show promise as sensitive, nanoscale light detectors, which can be integrated into future nanophotonic systems.
[1] J.U. Lee, P.P. Gipp, and C.M. Heller, Appl. Phys. Lett., 85, 145 (2004)
[2] K. Bosnick, N. Gabor, and P. McEuen, Appl. Phys. Lett., 89, 163121 (2006)
[3] N.M. Gabor, Z. Zhong, K. Bosnick, J. Park, and P.L. McEuen, manuscript in preparation
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PRIMARY TOPIC: F
SECONDARY TOPIC: M
THIRD TOPIC: A5
PREFERRED FORMAT OF PRESENTATION (ORAL/POSTER): Invited
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Corresponding author name: Ken Bosnick
Corresponding author email:
Please name this file: LastName_Topic1_Topic2
TOPICS
Please choose primary and secondary topics
A Optical properties of materials
A1 General
A2 Crystals
A3 Polycrystalline bulk and film
A4 Amorphous and organics
A5 Nanostructures, including photonic crystals
B Preparation and Characterization of Quantum Dots, Quantum Wires and Other Quantum Structures
C Excitonic Processes
D Luminescence, Phosphors, Scintillators and Applications
E Photoinduced Effects and Applications
F Photoconductivity and Photogeneration
G Nonlinear Optical Effects and Applications
H Electro-Optic Effects and Applications
I Glasses for Optics, Optoelectronics and Photonics (including ZBLAN, fluozirconate, oxyfluoride and other glasses)
J Polymers for Optics, Optoelectronics and Photonics
K Semiconductors for Optoelectronics
J1 Semiconductors for Optoelectronics: Wide Bandgap
J2 Semiconductors for Optoelectronics: Narrow Bandgap
J3 Semiconductors for Optoelectronics: Heterostructures
L Light Emitting Devices (including organics)
M Photonic and Optoelectronic Materials and Devices (including devices for telecommunications, laser and detectors)
N Optical Storage
O Photovoltaics (materials and devices, and their properties)
P Waveguides and Integrated Photonics
Q Silicon Photonics
R Optical Fibers and Fiber Sensors
S Experimental Techniques
T Femtosecond Spectroscopy
U Teraherz (THz) techniques, including materials, emitters and detectors
V Defect Spectroscopy
W Plasmons and Surface Plasmons
X Selected Topics (e.g. Photocatalysts in Materials, Materials for Energy Conversion etc)
Invited Abstract submission
Before: 1 February, 2008