神戸でのWAC2010に是非参加ください
WAC 2010
September 19-23
Kobe, Japan
Science Based New Silicon Devices Exhibiting Super High Performance
by Very New Plasma Equipment Completely Free From Damages
TadahiroOhmi
New Intelligence for IC Differentiation Project
Tohoku University
JAPAN
ABSTRACT
Current silicon technologies are now facing with very severe standstill, i.e., the speedperformance of microprocessors cannot be improved any more at the current maximum clock rate of 3.8GHz. Current silicon technologies are characterized by the high temperature thermal oxidation using O2 and/or H2O molecules to form the gate insulator films of MOS transistors, resulting in the fact that relatively high integrity silicon dioxide films (SiO2) are obtained only on the (100) silicon surface while there are obtained very poor quality oxide films on the other silicon surfaces. Thus, silicon LSI can be fabricated only on the (100) silicon surface using two dimensional (2D) structure MOS transistors, so that the very limited capability of the silicon crystal can be used to the practical applications by the current silicon technologies. In order to overcome these stagnations of silicon technologies, we must develop science based new silicon technologies instead of current experience and feeling based silicon technologies to form very high integrity gate insulator films on any crystal orientation silicon surface with the same formation speed based on the radical reactions, where very high integrity SiO2 films and Si3N4 films can be formed using oxygen radicals O* and NH* radicals on any crystal orientation silicon surface with the same formation speed, so that the three-dimensional (3D) structure MOS transistors are fabricated on any crystal orientation silicon surface. Thus, the entire capability of the silicon crystal will be used to the practical applications where the speed performance of silicon LSI will be improved greater than 100 GHz by introducing balanced CMOS of accumulation mode MOS transistors having atomic order flat gate insulator film to silicon interface on the (551) surface SOI wafers where the source and drain electrode series resistance is decreased by a factor of two orders of magnitude, i.e., science based new silicon devices will start just right now.
About the Speaker:Prof. Ohmi received the B.S., the M.S., and Ph.D. degrees in electrical engineering from Tokyo Institute of Technology, Tokyo, in1961, 1963, and 1966, respectively.
From 1966 until 1972, He served as a research associate in the Department of Electronics, Tokyo Institute of Technology. Then, he moved to Research Institute of ElectricalCommunication, Tohoku University and became an associate professor in 1976. In 1985 he became a professor at Department of Electronics, Faculty of Engineering, Tohoku University. Since 1998, he has been a professor at TadahiroUniversity.
His research field covers whole Si-based semiconductor and flat panel display technologies in terms of material, process, device, circuit, and system technologies. He is known as an originator of "Ultraclean Technology," which introduced ultraclean and scientific way of thinking into semiconductor manufacturing industry and became indispensable technology today. He is now promoting “New Intelligence for IC Differentiation (DIIN)” project at Tohoku University.