About MOSIS Service

★ About MOSIS Service

For 30-plus years, IC designers have relied on MOSIS for an efficient, affordable way to prototype and volume-produce their devices.

Many turn to MOSIS for our special expertise in providing Multi-Project Wafers (MPWs) and related services that drive IC innovation. This "shared mask' model combines designs from multiple customers, or diverse designs from a single company, on one mask set. It's a practical prototyping channel that allows designers to debug and perform essential design adjustments - before making a substantial strategic investment. Today, with mask costs soaring, more designers than ever are using MPWs to manufacture proven devices and prototype new designs on a single wafer.

Beyond MPWs, customers are increasingly choosing MOSIS as their resource partner for volume-production. From design spec interpretation through mask generation and device fabrication, and onto assembly, MOSIS is their trusted expert interface to the semiconductor ecosystem.

Since 1981, more than 50,000 IC designs have been processed through our service.

Low Cost

MOSIS keeps the cost of fabricating prototype quantities low by aggregating multiple designs onto one mask set. This allows customers to share overhead costs associated with mask making, wafer fabrication, and assembly. MOSIS offers minimum (e.g. 40 die) and medium (500, 2000 die, etc.) quantities within the regularly scheduled (typically monthly) Multi-project Runs. Dedicated runs (also known as COT or Customer Owned Tooling runs) are available for all processes. Dedicated runs can be scheduled to start at any time.

Access to Technology

MOSIS provides access to a wide variety of semiconductor processes offered by many different foundries.

Compatibility with Tools and Libraries

A variety of design flows (digital, analog, mixed-signal) can be used with a number of different CAD tools, technology files, design kits, libraries and IP to create designs for processes accessed by MOSIS.

★ Available Process

IBM Fabrication Processes

The IBM fabrication processes available through MOSIS include

SiGe: 8HP(0.13µm), 8XP(0.13µm), and 7WL(0.18µm)
CMOS: 8RF-DM(0.13µm)
SOI: 7RFSOI(0.18µm)

★2014 Fabrication Schedule

Technology / Customer Submission Date
Jan / Feb / Mar / Apr / May / Jun / Jul / Aug / Sep / Oct / Nov / Dec
8HP / 0.13 µm / 27 / 31 / 27 / 28 / 29 / 24
8RF 2 / 0.13 µm / 18 / 19 / 18 / 17
8XP / 0.13 µm / 24 / 23 / 20
7HV / 0.18 µm / 3 / 2 / 2 / 1
7RF / 0.18 µm / 3 / 2 / 2 / 1
7RFSOI / 0.18 µm / 6 / 10 / 5 / 7 / 8 / 3
7WL / 0.18 µm / 21 / 17 / 19 / 21 / 15 / 17
5PAE 1 / 0.35 µm / 13 / 21 / 14 / 27

1 Contact MOSIS Support if designs are planned.
2 8RF-LM 0.13 µm designs can be added to 8RF-DM runs with sufficient advance notice to

★ Price List

Process / Technology / Min. Size / Price
IBM / 8HP(0.13um SiGe BiCMOS) / 25mm^2 / 협의 후 결정
8XP(0.13um SiGe BiCMOS) / 25mm^2
8RF_DM(0.13um CMOS Mixed Mode) / 4mm^2
7HV(0.18um High Voltage CMOS) / 25mm^2
7RF(0.18um CMOS) / 25mm^2
7RF SOI(0.18um CMOS on Insulator) / 16mm^2
7WL(0.18um SiGe BiCMOS) / 25mm^2
5PAE(0.35um SiGe BiCMOS) / 25mm^2

★ Contact
셀로코㈜ 송원석 부장 / 010-2218-6624 / 02-3432-1201