SPCC2017 Agenda

Monday — March 27th, 2017

10:00 AM – 5:00 PM:Post CMP Cleaning Conference

5:00 PM – 6:30PM:SPCC Pre-registration and Networking Reception

Location: Courtyard Terrace:

DAY 1 — Tuesday March 28th, 2017

7:30 AM – 9:00 AM Breakfast Location: Courtyard Terrace

Session 1:Keynote/BEOLLocation: Amphitheatre 204

Session Chair: Joel Barnett

9:00 AM: Introductions, Day 1 Welcome, Conference Overview — Joel Barnett/Mark Thirsk

9:15 AM: KEYNOTE: Wafer Cleanliness: Challenges from an Increasingly Complex Fab Process – Ben Eynon, Assistant Director, Strategic ProgramsUniversity of Texas at Austin, NASCENT Center

9:55 AM:INVITED: Chemical Bonding Transformation Mapping to Optimize Low-k Dielectric Nanostructure Fabrication and Post-etch Residue Clean – Professor Oliver Chyan, Director, Interfacial Electrochemistry and Materials Research Lab, UNT

10:20 AM - 10:45 AM BREAK Location: Courtyard Terrace

Session 1:BEOL (Continued)Location: Amphitheatre 204

Session Chair: Akshey Sehgal

10:45 AM: Wet clean transfer challenges in 22 nm ½ pitch and 16 nm ½ pitch structures – Els Kesters, imec

11:05 AM: High Temperature Water as a Clean and Etch of low-k Films – Rick Reidy, University of North Texas

11:25AM: Contact cleaning opportunities on single wafer tool – Lucile Broussous, ST

11:45AM: Removal of edge cluster defects by improving recipe and hardware for backside polysilicon wet etch process – Hong-Ying Zhai, GLOBALFOUNDRIES

12:05 PM – 1:30 PM LUNCH Location: Tejas Restaurant

DAY 1 — Tuesday March 28th, 2017 cont’d

Session 2:Contamination Control Location: Amphitheatre 204

Session Chairs: Martin Knotter, Chris Sparks

1:30PM: INVITED: The Future of Micro-Contamination Control in Chemical Delivery Systems for Advanced Lithography & Wet Etch and Clean Semiconductor Processes – Dr. Archita Sengupta, Intel Senior Technologist, Intel

1:55 PM: Effect of dilute hydrogen peroxide in ultrapure water – Yuichi Ogawa, Kurita

2:15 PM: Effect of Sulfuric Acid Manufacturing Process on Semiconductor Inline Defects – Dhiman Bhattacharyya, GLOBALFOUNDRIES

2:35 PM: Blisters formation mechanism during High Dose Implanted Resist Stripping – MarionCroisy, ST

2:55 PMGas Purge or Wet Cleaning? Decontamination Solutions to control AMCs in FOUPs – Paola González-Aguirre, Entegris

3:15 PMINVITED: Non-uniform contamination results in sub-ppm fail rates: analytical challenges – Dr. Martin Knotter, Senior Principal Scientist, NxP

3:40 PM – 4:00 PM: BREAK Location: Courtyard Terrace

Session 3:Panel Discussion– Addressing Contamination Control

Location: Amphitheatre 204Moderator: TBD

4:00 PMPanel Discuss

5:20 PM: Wrap Up/Additional Questions/Adjourn Organizers

5:30 PM: Day 1 End

6:00 PM - 8:00 PM Poster Session and Networking Reception

Location: Tejas Restaurant

DAY 2 — Wednesday, March 29th, 2017

7:30 AM – 8:30 AM Breakfast Location: Courtyard Terrace

Session 4: Advanced Surface Prep for FEOL Location: Amphitheatre 204

Session Chairs: Joel Barnett, Jeff Butterbaugh

8:30 AM: Introductions, Day 2 Welcome

8:40 AM:INVITED: Nitride Device Surface Processes: A Review of Surface Science for Power and RF Technologies with Nitrides – H. Rusty Harris, Associate Professor of Electrical and Computer Engineering, Texas A&M University

9:05 AM: Si1-xGex (100) (x=0.25) MISCaps with Aqueous Ammonium Sulfide Passivation – Lauren Peckler, U of Arizona

9:25 AM:Surface Preparation and Wet Cleaning for Germanium Surface – Hajime Shirakawa, Screen

9:45 AM Wet and Siconi cleaning sequences for SiGepMOS channel – Pierre-Edouard Raynal, CEA-Leti

10:05 AM - 10:30 AM BREAK Location: Courtyard Terrace

Session 4: Advanced Surface Prep for FEOL and FinFET

Session Chairs: Jim Snow, Frank Holsteyns

Location: Amphitheatre 204

10:30 AM: A Wet Clean Solution to Reduce Unwanted eSiGe Growth Defect in FinFET – Jian Li, GLOBALFOUNDRIES

10:50 AM:Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors – Guy Vereecke, imec

11:10 AM:New Wet Clean Process for Selective Nitride Film Removal with Exposed Oxide, low k and eSiGe, – AksheySehgal, GLOBALFOUNDRIES

11:30AM – 12:45PM LUNCHLocation: Tejas Restaurant TECHNICAL COMMITTEE LUNCH Location:Tejas Restaurant

2 — Wednesday, March 29th, 2017 cont’d

Session 5: EtchingLocation: Amphitheatre 204

Session Chairs: Ajay Bhatnagar, Jagdish Prasad

12:45 PM: INVITED: Shifting Global Economic Forces Shaping the Semiconductor Outlook — Duncan Meldrum Ph.D., Chief Economist, Hilltop Economics LLC

1:10 PM: Thermal SiO2 Atomic Layer Etching by a “Conversion-Etch” Mechanism Using Sequential Exposures of HF and Al(CH3)3 – Steven George, University of Colorado

1:35 PM:Effect of Additives in Diluted HF Solutions on Removal of Metal Contaminants and Particles on Silicon Wafer – Jin-Goo Park, Hanyang University

1:55 PM - 2:10 BREAK Location: Courtyard Terrace

Session 6: Post CMP CleaningLocation: Amphitheatre 204

Session Chairs: Jin-Goo Park, Yannick Le Tiec

2:10 PM:INVITED: Post CMP in-situ cleaning for 14/7nm transistor scaling: a crucial process for yield enhancement at advanced node device fabrication – Dr. TaeHoon Lee, FEOL CMP Technical lead of Advanced Module Engineering Team, GLOBALFOUNDRIES

2:35 PMHigh Performance Ceria Post-CMP Cleaning Formulations for STI Dielectric Substrates – Daniela White, Entegris

2:55 PMMechanistic and Electrochemical Aspects of Copper and Cobalt Post CMP Cleaners for 5-7 nm Nodes – Mike White, Entegris

3:15 PMCMP Stack-Trek – Viorel Balan, CEA-Leti

3:35 PM: Wrap Up/Additional Questions/Adjourn Organizers

3:45 PM: Day 2 End

Posters

  • Chemical/Mechanical Balance Management through Pad Microstructure in CMP

– Ratanak Yim, CEA-Leti

  • Process Model Identification for Optimizing Particle-to-Part Selectivity during Ultrasonic Parts Cleaning

– Osama Khalil, Quantum Clean

  • Advantages of using RGA as part of Atomically Clean Surface (ACS™) for Sub-10nm Parts Cleaning Process

– Matthew House, Quantum Clean

  • Sulfate ion removal by combined UV and bake process

– Fei Xu, Changzhou Ruize Micro

  • Particle Clean-Up of Various Filter Media in WEC Chemistry via 20 nm Particle Counting – Patrick Connor, Pall
  • Effective Point of use Filtration of Ultrapure Water for Critical Tools and Processes – Glen Sundstrom, Evoqua Water Technologies
  • Continuous Monitoring of Particles at 20 nm in Critical Semiconductor Process Chemicals – Dan Rodier, PMS
  • Implementing Chemical Cost Saving in 14 nm High Volume Manufacturing Line – Tejasvi Sadasivuni, GLOBALFOUNDRIES
  • Improved Missing Pattern Defects using Megasonic for Hard Mask clean at 14 nm and Beyond – Sangita Kumari, GLOBALFOUNDRIES
  • Dummy Poly Gate Etch Residue Removal – Wen Dar Liu, Versum
  • Indium Bump Liftoff Challenges – Scott Tice, MEI