List of selected publications Dr. Ilia P. Soshnikov
1.N.A.Bert, I.P.Soshnikov
Investigation of sputtering of phosphide, arsenide and antimonide gallium under Ar+ ion bombardment with energy E=2-8 keV
Phys. Solid State 35(9), (1993), 1239-1242
1. I.P.Soshnikov, N.A.Bert
Influence of volume binding to values of threshold energy for sputtering of solids
Tech. Phys. 41(6) (1996), 567 -570
2. I.P.Soshnikov, Yu.A.Kudriavtsev, A.V. Lunev, N.A.Bert
Sputtering of III-V semiconductors under argon atom and ion bombardment
Nucl. Instrum. Meth. B127/128, (1997), 115-118
3.M.G.Stepanova, I.P.Soshnikov, N.A.Bert
Long-range effect in gallium arsenide under ion bombardment
Solid State Phys, 40(3), (1998) 401-402
4. R.Heitz, N.N.Ledentsov, D.Bimberg, A.Yu.Egorov, M.V.Maximov, V.M.Ustinov, A.E.Zhukov, Zh.I.Alferov, G.E.Cirlin, I.P.Soshnikov, N.D.Zakharov, P.Werner, and U.Gösele
Optical properties of InAs quantum dots in a Si matrix
Appl. Phys. Lett. 74, (1999), 1701-1703
5. A.E.Zhukov, A.R.Kovsh, S.S.Mikhrin, N.A.Maleev, V.M.Ustinov, D.A.Lifshits, I.S.Tarasov, D.A.Bedarev, M.V.Maximov, A.F.Tsatsul’nikov, I.P.Soshnikov, P.S.Kop’ev, Zh.I.Alferov, N.N.Ledentsov, and D.Bimberg
3.9 W CW Power from Sub-monolayer Quantum Dot Diode Laser
Electronics Letters 35(21), (1999), 1845-1847
6. V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, M. V. Maximov, B.V.Volovik, A.F.Tsatsul’nikov, P. S. Kop`ev, Zh. I. Alferov, I.P.Soshnikov, N.Zakharov, P.Werner and D. Bimberg
1.75 µm emission from self-organized InAs quantum dots on GaAs
J.Cryst. Growth 201/202, (1999) 1143-1145.
7. I.P.Soshnikov, M.G.Stepanova,
Threshold sputtering of two-components materials
Surf. Investigation: X-ray, Synchrotron and Neutron Techniques, 14(9), (1999)
8.I.L. Krestnikov, A.V.Sakharov, Yu.G.Musikhin, W.V.Lundin, A.P.Kartashova, A.S.Usikov, A.F.Tsatsul'nikov, N.N.Ledentsov, Zh.I.Alferov, I.P.Soshnikov, E.Hahn, B.Neubauer, A.Rosenauer, D.Litvinov, D.Gerthsen, A.C.Plaut, A.Hoffmann, D.Bimberg
Laser generation in vertical direction in InGaN/GaN/AlGaN structure with InGaN quantum dots.
Semiconductors 34(4), (2000)
9. I.P.Soshnikov, V.W.Lundin, A.S.Usikov, I.P.Kalmykova, N.N.Ledentsov, A.Rosenauer, B.Neubauer, D.Gerthsen
Formation of InxGa1-xN including in GaN matrix by MOCVD growth
Semiconductors 34(6), (2000)
10. I.P.Soshnikov, N.A.Bert
Sputtering A3B5 semiconductors under bombardment by N2+ ions
Technical Physics 70(9), (2000)
11. I.P.Soshnikov, A.V.Lunev, M.E.Gaevskii, L.G.Rotkina, S.I.Nesterov, M.Kulagina, V.T.Barchenko, I.P.Kalmykova, A.A.Efimov, O.M.Gorbenko,
Formation of morphology on InP surface under argon ion beam sputtering
Techn.Phys. (2001) (in print)
12. I.P.Soshnikov, O.M.Gorbenko, A.O.Golubok, N.N.Ledentsov
Composition analysis of coherent nanostructures of solid solution by high resolution electron microscopy images
Semiconductors 1(3), (2001)
13. I.P.Soshnikov, A.V.Lunev, M.V.Maximov, V.T.Barchenko, I.P.Kalmykova, A.A.Efimov,
Optical properties of InP surface with regular morphology formed by ion beam etching
Surf. Investigation: X-ray, Synchrotron and Neutron Techniques, 18 (2001) 99-103
14 I.P.Soshnikov, N.A.Bert, S.Murashov, A.Shahmin, M.A.Hodorkovskii M.G.Stepanova,
Surface composition of vanadium-tantalum solid solution under low energy ion bombardment
Surf. Investigation: X-ray, Synchrotron and Neutron Techniques, 18 (2001) 104-106
15. I.P.Soshnikov, N.N.Ledentsov, B.V.Volovik, A.Kovsh, N.A.Maleev, S.S.Mikhrin, O.M.Gorbenko, W.Passenberg, H.Kuenzel, N.Grote, V.M.Ustinov, H.Kirmse, W.Neumann, P.Werner, N.D.Zakharov, D.Bimberg, Zh.I.Alferov
Nitrogen-activated phase separation in InGaAsN/GaAs heterostructures grown by MBE
Accepted to Nanostructures: Physics and Technology 2001.