E-Beam Resist Overview

Any e-beam exposure is highly dependant upon processing and the substrate.This information is provided as a starting point and will required experimentationto optimize things for your work. Some of the information contained here is reprinted from resist data sheets from the manufacturer. Often, more information is available when you need to develop a specific resist process to use.

Many of the chemicals involved in resist processing can be extremely dangerous. HMDS is toxic liquid. Solvents such as acetone, PGMEA are highly flammable and explosive. TMAH developers are bases with a Ph of 14. Skin contact with these chemicals is immediately dangerous, and eye contact will quite possibly result in loss of sight.

BEFORE you can do any resist processing, you must be familiar with the chemicals you will be using, and know and respect the dangers of them.

TDUR-P015 Resist

TDUR-P015is a poor resolution chemically amplified positive resist used mostly for substrate writing.

Characteristics:

  • Positive tone
  • 200 nm best resolution for isolation trench
  • Poor dry etch resistance
  • For substrate, normally applied at 3000 rpm / 410nm thick
  • short shelf life for resist solution
  • sensitive to white light

Basic Processing:

HMDS / 90℃ / 60 sec
Cooling down / 23℃ / 30 sec
Spin-coating / Spreading PGMEA solvent before coating resist. 3000rpm / 410nm resist thick.
Edge/back remove by PGMEA
Soft bake / 100℃ / 90 sec
expose / Dose around 50µＣ/cm² and 70µＣ/cm² for 200nm trench and hole at 40kev
Post expose bake / 120℃ / 90 sec
Cooling down / 23℃/ 30 sec
developer / E2-nozzle developer TMAH 2.38% / 60 sec
dry / Spin dry
Hard bake / 115℃/ 600 sec
ADI / CD-SEM

All coating and developer process are programmed #2 and # 4 recipe by CLEAN TRACK, respectively.

NEB22-A2 Resist

High resolution chemically amplified negative resist with high sensitivity and contrast.

Characteristics:

  • negative tone
  • 100 nm best resolution for isolation line
  • For substrate, normally applied at 1120 rpm / 360nm thick
  • long shelf life for resist solution
  • not sensitive to white light

Basic Processing:

HMDS / 90℃/ 60 sec
Cooling down / 23℃/ 30 sec
Spin-coating / Spreading PGMEA solvent before coating resist. 1120rpm / 360nm resist thick.
Edge/back remove by PGMEA
Soft bake / 110℃ / 120 sec
expose / Dose around 7.2µＣ/cm² for 100nm isolated line at 40kev
Post expose bake / 105℃ / 120 sec
Cooling down / 23℃ / 30 sec
developer / E2-nozzle developer TMAH 2.38% / 60 sec
dry / Spin dry
Hard bake / 110℃ / 120 sec
ADI / CD-SEM (In-line SEM)

All coating and developer process are programmed #1 and # 5 recipe by CLEAN TRACK, respectively.