Integra Announces a Trio of Integrated Power Modules

Integra announces a trio of integrated power modules

50 Ohm matched pallets ease manufacturability and reduces cycle time

ANAHEIM, California (USA) – May 25, 2010 – Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, today announced the development of the three new 50 ohm modules that integrate numerous RF power transistors for higher power and gain performance on a single PCB than can be obtained with individual devices alone. The ILP1214EL200 is a two-stage, high gain pallet utilizing LDMOS devices operated under the stringent pulse conditions of 16ms and 50% duty cycle for L-band radar applications. The IBP1214M700 integrates two high power bipolar devices into a 50 ohm module providing over 700W of peak output power for L-band radar applications. The IBLP1012S1800 showcases Integra’s capability to provide the best solutions for our customers, combining a LDMOS driver stage with high power bipolar devices in the output stage. The IBLP1012S1800 produces more than 2000W across the 1025 – 1150MHz frequency band of operation.

“Integra is in the unique position in offering highly integrated pallets using two different low cost silicon technologies that aid the development of high power systems for our customers.” says John Titizian, Integra’s founder and president “Integra provides the most peak power per area with Bipolar technology for light-weight and space constrained designs, LDMOS technology for any pulse width and duty cycle design, and a combination of technologies for high gain input stages driving high power output stages. Serving our customers with both technologies allows us to offer the best of both worlds.”

Integra offers fully impedance matched pallets that are easy to use which is necessary as more and more manufacturing capability gets shipped overseas. “Integra provides the power combining, device mounting and RF matching networks ensuring optimum thermal transfer and, therefore, performance in our fully integrated solution. By eliminating any further engineering effort we ease the manufacture of high power amplifiers and ultimately reduce design cycle time.” says Apet Barsegyan, Vice President of Amplifiers and co-founder at Integra.

About the ILP1214EL200

Part number ILP1214EL200 is a 50 Ω impedance matched high power pulsed radar pallet amplifier for L-band radar systems operating over the instantaneous bandwidth of 1210-1400 MHz. Under the stringent pulse conditions with 16ms pulse width 50% duty cycle pulsing conditions, the 2-stage ILP1214EL200 typically supplies a minimum of 200 watts of peak pulsed output power while producing 22dB gain. Specified operation is with Class AB bias. The LDMOS transistor geometry utilizes a gold metallization system to achieve maximum reliability.

About the IBP1214M700

Part number IBP1214M700 is a 50 Ω impedance matched high power pulsed radar pallet amplifier for L-band radar systems operating over the instantaneous bandwidth of 1210-1400 MHz. Under 200µs pulse width and 10% duty cycle pulsing conditions, the single stage IBP1214M700 typically supplies a minimum of 700 watts of peak pulsed output power while producing 9dB gain. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability.

About the IBLP1012S1800

Part number IBLP1012S1800 is a 50 Ω impedance matched high power pulsed radar pallet amplifier for avionics applications operating over the instantaneous bandwidth of 1025-1150 MHz. Under 5µs pulse width and 1% duty cycle pulsing conditions, the 2 stage IBLP1012S1800 typically supplies a minimum of 2000 watts of peak pulsed output power while producing 23dB gain. All devices utilize a gold metallization system to achieve maximum reliability.

Samples and Availability

The ILP1214EL200, IBP1214M700 and IBLP1012S1800 are all available immediately for sampling. For pricing and delivery please email

About Integra Technologies

Integra is the premier supplier of high power pulsed transistors to the aviation industry, with an enviable portfolio covering radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, Bipolar and GaN-on-Si all produced in a domestic all-gold 6” wafer fab. Privately owned and operated with zero debt, Integra employs nearly 100 people at its worldwide headquarters located in El Segundo, CA.

More information on Integra can be found at http://www.integratech.com

Media Contact:

TEL. 310-606-0855 X131

Email:

SOURCE: Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245

The Integra name and logo are registered trademarks of Integra Technologies, Inc. in the USA. All other trademarks mentioned herein are the property of their respective companies.