TABLE OF CONTENTS
SECTION I. RESOURCES: SECONDARY ION MASS SPECTROMETRY
(SIMS) AND ION IMPLANTATION of ALL ELEMENTS INTO:
I.1 METALS
Range Calculations for Metals
Ranges in Metals Compared with Experiment
Measured and Calculated Implantation Data
I.2 INSULATORS (Dielectrics)
Range Calculations for Insulators
I.3 WIDE BANDGAP MATERIALS
I.4 POLYMERS
I.5 SEMICONDUCTORS
SECTION II. SECONDARY ION MASS SPECTROMETRY
II.1 SIMS TECHNOLOGY
a. QUANTIFICATION for SIMS
b. THE SIMS RSF
c. DEPENDENCE of SIMS RSFs on INSTRUMENT CONDITIONS:Accuracy
of RSF DETERMINATION
d. SIMS TECHNIQUE SELECTION CRITERIA
e. O2 POSITIVE vs Cs NEGATIVE SIMS and comparisons for same
distributions
f. Cs POSITIVE SIMS g. SIMS of MULTIPLE IMPLANTS
h. IMPURITY ANALYSIS
i. SIMS INSTRUMENT ORIGIN
j. SPUTTERING RATES
k. Er in AlGaAs – a SIMS ISSUE
II.2 SIMS MASS SPECTRA for many materials
Ion Mass Spectra
Instrument, Analysis, and Sample Conditions
Alkaline and Rare Earth Elements
Lanthanide Rare earth Elements
Heavy and Noble Metals
Enriched and Depleted Metals
Pure and Impure Metals
Dielectric Materials (Insulators)
Rare Earth Fluoride Glasses
Selected Materials
Elemental and Compound Semiconductors
II.3 SIMS of COMPOUND SEMICONDUCTORS DEVICES and STRUCTURES
SECTION III. ELECTRON AFFINITIES
III.1 EAs
III.2 EAs from SIMS
SECTION IV. ION IMPLANTATION
IV.1 HISTORY
IV.2 IMPLANTER SYSTEMS
a. Implanter systems
b. Early implanters at Hughes
c. Early non-Hughes Implanters
IV.3 ION CHANNELING and ELECTRONIC STOPPING
a. Ion Channeling Bibliography
b. Channeling of B in <110> Cu
c. Channeling of S in Si
IV.4 H in MATERIALS
IV.5 IMPLANTER MASS SPECTRA
a. Positive Ion Source Mass Spectra
b. Negative Ion Source Mass Spectra
IV.6 AMORPHOUS SI
a. Amorphous Si
b. H and F in Amorphous Si
IV.7 SUPPORTING TECHNOLOGIES
a. C-V Depth Profiling
b. Pearson IV and Fitting to Determine Moments of Depth Distribution
IV.8 RANGES, STOPPING POWERS, and DEPTH DISTRIBUTIONS
LITERATURE (1960-1987)
a. Literature
b. Range Formula
c. Range Table
SECTION V. ION MPLANTATION, SIMS, and TEM WORKING TOGETHER:
CORRELATION BETWEEN DAMAGE/DEFECT DISTRIBUTIONS and
CRYSTAL REGROWTH, and MOBILE IMPURITY DEPTH DISTRIBUTIONS,
USING SIMS