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THE UNIVERSITY OF BRITISH COLUMBIA
Publications Record
SURNAME: PULFREY FIRST NAME: David Initials: D.L.P.
MIDDLE NAME (S): Leslie Date: 13 / Dec / 2009
Those publications considered to be of primary importance are indicated by an asterisk.
1. REFEREED PUBLICATIONS
(a) Journals (inverse chronological order to 2000: chronological order 1968-1999)
1. G.B. Abadir, K. Walus, and D.L. Pulfrey, " Bias-dependent amino-acid-induced conductance changes in short semi-metallic carbon nanotubes", Nanotechnology, 21, 015202, 2010.
2. Li Chen and D.L. Pulfrey, "Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance, Solid-State Electronics, 53, 935-939, 2009.
3. G.B. Abadir, K. Walus, and D.L. Pulfrey, "Comment on "Curvature effects on electronic properties of small radius nanotube"[Appl. Phys. Lett. 91, 033102 (2007)]", Appl. Phys. Lett., 94, 176101, 2009.
4. G.B. Abadir, K. Walus, and D.L. Pulfrey, “Basis-Set Choice for DFT/NEGF Simulations of Carbon Nanotubes". J. Computational Electronics, 8, 1-9, 2009.
5. *B. Faraji, W. Shi, D.L Pulfrey, and L. Chrostowski, “Analytical modeling of the transistor laser”, IEEE J. Sel. Topics Quantum Electronics, 15, 594-603, 2009.
6. Behnam Faraji, Wei Shi, David L. Pulfrey, and Lukas Chrostowski, "Common-emitter and common-base small-signal operation of the transistor laser", Appl. Phys. Lett., 93, 143503, 2008.
7. B. Faraji, D.L. Pulfrey, and L. Chrostowski, “Small-signal modeling of the transistor laser including quantum capture and escape lifetimes”, Appl. Phys. Lett., 93, 10359, 2008.
8. G. Abadir, K. Walus, R.F.B. Turner, and D.L. Pulfrey, “Biomolecular Sensing using Carbon Nanotubes: A Simulation Study”, Int. J. High-Speed Electronic Systems, 18(4), 879-997, 2008.
9. * D.L. Pulfrey and Li Chen, “Examination of the high-frequency capability of carbon nanotube FETs”. Solid-State Electronics, 52, 1324-1328, 2008.
10. * D.L. Pulfrey, L.C. Castro, D.L. John, and M. Vaidyanathan, “Regional signal-delay analysis applied to high-frequency carbon nanotube FETs, IEEE Trans. Nanotechnology, 6(6), 711-717, 2007.
11. D.L. John and D.L. Pulfrey, "Issues in the modeling of carbon nanotube FETs: structure, gate thickness and azimuthal asymmetry ," J. Computational Electronics. 6, 175-178, 2007. Online: SpringerLink DOI:10.1007/s10825-006-0080-z.
12. L.C. Castro, D.L. Pulfrey and D.L. John, ``High-frequency capability of Schottky-barrier carbon nanotube FETs'', Solid-State Phenomena, 121-123, 693-696, 2007.
13. D.L. McGuire and D.L. Pulfrey, "A multi-scale model for mobile and localized electroluminescence in carbon nanotube field-effect transistors ," Nanotechnology, 17, 5805-5811, 2006.
14. * D.L. John and D.L. Pulfrey, “Switching-speed calculations for Schottky-barrier Carbon Nanotube FETs”, J.Vac.Sci.Tech.A, 24, 708-712, 2006.
15. D.L. McGuire and D.L. Pulfrey, “Error Analysis of Boundary-Condition Approximations in the Modeling of Coaxially gated Carbon nanotube FETs”, Physica Status Solidi A, 203, 1111-1116, 2006.
16. D.L. John and D.L Pulfrey, ``Green's functions calculations for semi-infinite carbon nanotubes'', Physica Status Solidi B, 243, 442-448, 2006.
17. * L.C. Castro and D.L. Pulfrey, ``Extrapolated fmax for carbon nanotube FETs'', Nanotechnology, 17, 300-304, 2006.
18. L.C. Castro, D.L. John and D.L. Pulfrey, ``An Improved Evaluation of the DC Performance of Carbon Nanotube Field-EffectTransistors,'' Smart Material and Structures, 15, S9-S13, 2006.
19. D.L. Pulfrey, G. Parish, D.K. Wee, and B.D. Nener, ``Surface-layer damage and responsivity in sputtered-ITO/ p-GaN Schottky-barrier photodiodes'', Solid-State Electron., 49, 1969-1973, 2005.
20. * L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, and H. Kosina, ``Method for predicting fT for carbon nanotube FETs'', IEEE Trans. Nanotechnology, 4, 699-704, 2005.
21. * D.L. John, L.C. Castro and D.L. Pulfrey, "Quantum Capacitance in Nanoscale Device Modeling," Journal of Applied Physics, 96(9), 5180-5184, 2004.
22. J.P. Clifford, D.L. John, L.C. Castro, and D.L. Pulfrey, "Electrostatics of Partially Gated Carbon Nanotube FETs," IEEE Transactions Nanotechnology, 3(2), 281-286, 2004.
23. J.P. Clifford, D.L. John and D.L. Pulfrey, "Bipolar Phenomena and Drain-Induced Barrier Lowering in Schottky-barrier carbon nanotube FETs", IEEE Trans. Nanotechnology, 2(3), 181-185, 2003.
24. * D.L. John, L.C. Castro, J.P. Clifford, and D.L. Pulfrey, "Electrostatics of coaxial Schottky-barrier nanotube field-effect transistors", IEEE Trans. Nanotechnology, 2(3), 175-180, 2003.
25. C.W. Fok and D.L. Pulfrey, “Full-chip power-supply noise: the effect of on-chip power-rail inductance”, Int. J. High Speed Electronics and Systems, 12(2), 573-582, 2002.
26. J.J. Kuek, D.L. Pulfrey, B.D. Nener, J.M. Dell, G. Parish and U.K. Mishra, “Effects of band tail absorption on AlGaN-based ultraviolet photodiodes”, Physica Status Solidi A, 188, 311-315, 2001.
27. * D.L. Pulfrey and S. Fathpour, “Performance predictions for n-p-n AlxGa1-xN/GaN HBTs, IEEE Trans. Elec. Dev., 48, 597-602, 2001.
28. L.S. McCarthy, I.P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D.L. Pulfrey, J.S. Speck, M.J.W. Rodwell, S.P. DenBaars and U.K. Mishra, “GaN HBT: Toward an RF device”, IEEE Trans. Elec. Dev., 48, 535-542, 2001.
29. D.L. Pulfrey, J.J. Kuek, M.P. Leslie, B.D. Nener, G. Parish, U.K. Mishra, P.Kozodoy and E.J. Tarsa, “High UV/Solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes”, IEEE Trans. Elec. Dev., 48, 486-489, 2001.
30. * D.L. Pulfrey, S. Fathpour, A.R. St.Denis, M. Vaidyanathan, W.A. Hagley and R.K. Surridge, “Applicability of the traditional compact expressions for estimating the regional signal delay times of HBTs”, J. Vac. Sci. Techn., 18A, 775-779, 2000.
31. A. Bradwell, D.L. Pulfrey, "Time of Breakdown in Solid Dielectrics", Brit. J. Appl. Phys., Ser. 2, 1, 1581-3, 1968.
32. W.A. Smith, C.T. Elliot, P.A. Chatterton, D.L. Pulfrey, "A Photographic Study of Electrical Breakdown at Small Gaps in Vacuum", Brit. J. Appl. Phys., Ser. 2, 2, 1005-1013, 1969.
33. D.L. Pulfrey, "A Generator of High Voltage Pulses with Subnanosecond Risetime and Adjustable Duration", J. Sci. Instr., Ser. 2, 2, 503-5, 1969.
34. D.L. Pulfrey, P.S. Wilcox, L. Young, "Dielectric Properties of Ta2O5 Thin Films", J. Appl. Phys., 40, 3891-8, 1969.
35. D.L. Pulfrey, A.H. Shousha, L. Young, "Electronic Conduction and Space Charge in Amorphous Insulating Films", J. Appl. Phys., 41, 2828-43, 1970.
36. G. Olive, D.L. Pulfrey, L. Young, "The Estimation of Field Strengths in the Oxide During Conventional and Plasma Anodization", J. Electrochem. Soc., 117, 945-7, 1970.
37. W.L. Lee, G. Olive, D.L. Pulfrey, L. Young, "Ionic Current as a Function of Field in the Oxide During Plasma Anodization of Tantalum and Niobium", J. Electrochem. Soc., 117, 1172-6, 1970.
38. R. Cooper, D.L. Pulfrey, "Discharge Propagation in Single Crystals of KBr", Brit. J. Appl. Phys., Ser. 3, 4, 292-7, 1971.
39. A.H. Shousha, D.L. Pulfrey, L. Young, "Filamentary Thermal Breakdown in Thin Dielectrics", J. Appl. Phys., 43, 15-18, 1972.
40. D.L. Pulfrey, "The Electrical Breakdown of Solid Dielectrics in Non-Uniform Fields", J. Phys. D. Appl. Phys., 5, 647-55, 1972.
41. G. Olive, D.L. Pulfrey, L. Young, "The Role of Plasma Negative Ions in Plasma Anodization", Thin Solid Films, 12, 427-32, 1972.
42. D.L. Pulfrey, J.J.H. Reche, "The Determination of Thin Film Optical Properties from Single-Angle Reflectance Measurements", Appl. Optics, 12, 1577-82, 1973.
43. J.J.H. Reche, D.L. Pulfrey, "A Reflectance Analog Computer for the Determination of Thin Film Optical Properties", Rev. Sci. Instr., 44, 914-15, 1973.
44. D.L. Pulfrey, F.G.M. Hathorn, L. Young, "The Anodization of Si in an R.F. Plasma", J. Electrochem. Soc., 120, 1529--35, 1973.
45. * D.L. Pulfrey, R.F. McOuat, "Schottky Barrier Solar Cell Calculations", Appl. Phys. Lett., 24, 167-9, 1974.
46. D.L. Pulfrey, J.J.H. Reche, "Preparation and Properties of Plasma-Anodized Silicon Dioxide Films", Solid State Electron.,17, 627-32, 1974.
47. J.J.H. Reche, D.L. Pulfrey, "Deformation of Aluminum Films During Anodization", J. Electrochem. Soc., 122, 1553-6, 1975.
48. * R.F. McOuat, D.L. Pulfrey, "A Model for Schottky-Barrier Solar Cell Analysis", J. Appl. Phys., 47, 2113--9, 1976.
49. D.L. Pulfrey, "Barrier Height Enhancement in P-Silicon MIS Solar Cells", IEEE Trans. Electron Dev., ED-23, 587-9, 1976.
50. * D.L. Pulfrey, "A Minority Carrier MIS Solar Cell", Solid-State Electronics, 20, 455--457, 1977.
51. M. Propp, L. Young, D.L. Pulfrey, G. Olive, "Kinetics of Plasma Anodization of Aluminum", J. Electrochem. Soc., 124, 891-7, 1977.
52. D.L. Pulfrey, "On the Fill-Factor of Solar Cells", Solid-State Electronics, 21, 519-20, 1977.
53. * D.L. Pulfrey, "MIS Solar Cells: A Review", IEEE Trans. Elec. Dev., ED-25, 1308-17, 1978.
54. * N.G. Tarr, D.L. Pulfrey, "An Investigation of Dark Current and Photocurrent Superposition in Solar Cells", Solid-State Electronics, 22, 265--70, 1979.
55. * N.G. Tarr, D.L. Pulfrey, "New Experimental Evidence of Minority Carrier MIS Solar Cells", Appl. Phys. Lett., 34, 295--7, 1979.
56. V.F. Drobny, D.L. Pulfrey, "Properties of Reactively-Sputtered Copper Oxide Thin Films", Thin Solid Films, 61, 89--98, 1979.
57. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "MIS Solar Cells with Back Surface Fields", Appl. Phys. Lett., 35, 258-60, 1979.
58. * N.G. Tarr, D.L. Pulfrey, "The Superposition Principle for Homojunction Solar Cells", IEEE Trans. Elec. Dev., ED-27, 771-6, 1980.
59. J.K. Kleta, D.L. Pulfrey, "On the Stability of MIS Solar Cells", IEEE Elec. Dev. Lett., EDL-1, 107-9, 1980.
60. N.G. Tarr, P.A. Iles, D.L. Pulfrey, "An Induced Back Surface Field Solar Cell Employing a Negative Barrier MIS Contact", J. Appl. Phys., 7, 3926-29, 1980.
61. * D.S. Camporese, T.P. Lester, D.L. Pulfrey, "A Fine Line Silicon Shadow Mask for Inversion Layer Solar Cells", IEEE Elec. Dev. Lett., EDL-2, 61-63, 1981.
62. N.G. Tarr, D.L. Pulfrey, P.A. Iles, "Induced Back-Surface Field Solar Cells on P-Type Silicon Substrates", Appl. Phys. Lett., 39, 83-85, 1981.
63. N.G. Tarr, D.L. Pulfrey, P.A. Iles, A. Neugroschel, "New Experimental Evidence for Minority Carrier Reflection at Negative Barrier MIS Contacts", IEEE Trans. Elec. Dev., ED-29, 1018-1021, 1982.
64. * N.G. Tarr, D.L. Pulfrey, D.S. Camporese, "An Analytical Model for MIS Tunnel Junctions", IEEE Trans. Elec. Dev., ED-30, 1760-70, 1983.
65. T.P. Lester and D.L. Pulfrey, "A New Method Based on the Superposition Principle for the Calculation of the Two-Dimensional Potential in a Buried-Channel, Charge-Coupled Device", IEEE Trans. Elec. Dev., ED-31, 999-1001, 1984.
66. * T.P. Lester and D.L. Pulfrey, "A New MOS Photon-Counting Sensor Operating in the Above-Breakdown Regime", IEEE Trans. Elec. Dev., ED-31, 1420-7, 1984.
67. D.S. Camporese and D.L. Pulfrey, "The Effect of Metal Work Function on Current Conduction in Metal-Insulator-Semiconductor Tunnel Junctions", J. Appl. Phys., 57, 373-6, 1985.
68. P. Van Halen, D.S. Camporese and D.L. Pulfrey, "The Emitter Injection Efficiency and Effective Surface Recombination Velocity in Polysilicon Emitter Transistors", Canad. J. Phys., 63, 693--4, 1985.
69. * P. Van Halen, D.L. Pulfrey, "Accurate Short-Series Approximations to Fermi-Dirac Integrals of Order -1/2, 1/2, 1, 3/2, 2, 5/2 3 and 7/2", J. Appl. Phys., 57, 5271-4, 1985.
70. P. Van Halen and D.L. Pulfrey, "High Gain Bipolar Transistors with Polysilicon Tunnel Junction Emitter Contacts", IEEE Trans. Elec. Dev., ED-32, 1307-13, 1985.
71. S.P. Lee and D.L. Pulfrey, "Modelling the DC Performance of GaAs Bipolar Transistors", Solid-State Electronics, 29, 713-23, 1986.
72. * K.M. Chu and D.L. Pulfrey, "Design Procedures for Cascode Voltage Switch Logic", IEEE J. Solid State Circuits, SC-21, 1082-87, 1982.
73. D.L. Pulfrey, P.R.B. Ward and W.G. Dunford, "A Photovoltatic-Powered System for Medium-Head Pumping", Solar Energy, 38, 255-65, 1987.
74. * K.M. Chu and D.L. Pulfrey, "A Comparison of CMOS Circuit Techniques: Differential Cascode Voltage Switch Logic Versus Conventional Logic", IEEE J. Solid-State Circuits, SC-22, 528-532, 1987.
75. P.R.B. Ward, W.G. Dunford and D.L. Pulfrey, "Performance of Small Progressive Cavity Pumps with Solar Power", Canad. J. Civil Engg., 14, 284-287, 1987.
76. K.M. Chu and D.L. Pulfrey, "An Analysis of the DC and Small-Signal AC Performance of the Tunnel Emitter Transistors (TETRAN)", IEEE Trans. Elec. Dev., ED-35, 188-194, 1988.
77. N. Szeto, D.L. Pulfrey and N.G. Tarr, "Thermal Stressing of Bipolar Transistors with Metal-Insulator-Semiconductor Heterojunction Emitters", Appl. Phys. Lett., 52, 664-666, 1988.
78. * K.M. Chu and D.L. Pulfrey, "An Improved Analytic Model of the MIS Tunnel Junction", IEEE Trans. Elec. Dev., ED-35, 1656-1663, 1988.
79. * H. Zhou and D.L. Pulfrey, "A Criterion for Stationary Domain Formation in GaAs MESFETs", IEEE Trans. Elec. Dev., ED-36, 872-878, 1989.
80. B.P.C. Tsou, K.M. Chu and D.L. Pulfrey, "Series Resistance Calculations for Polysilicon Tunnel Junction Emitter Transistors", Can. J. Phys., 67, 218-220, 1989.
81. * S.C.M. Ho and D.L. Pulfrey, "The Effect of Base Grading on the Gain and High Frequency Performance of AlGaAs/GaAs HBTs", IEEE Trans. Elec. Dev., ED-36, 2173-2182, 1990.
82. S.P. Day, H. Zhou and D.L. Pulfrey, "The Kronig-Penney Model: May It Live On", IEEE Trans. Education, 33, 355-358, 1990.
83. A.P. Laser, K.M. Chu, D.L. Pulfrey, C.M. Maritan and N.G. Tarr, "An Investigation of PNP Polysilicon Emitter Transistors", Solid-State Electronics, 33, 355-358, 1990.
84. * H. Zhou, D.L. Pulfrey and M.T. Yedlin, "A Phenomenological Approach to the Estimation of Transit Times in GaAs HBTs", IEEE Trans. Elec. Dev., ED-37, 2113--2120, 1990.
85. * A.P. Laser and D.L. Pulfrey, "Reconciliation of Methods for Estimating fmax for Microwave Heterojunction Transistors", IEEE Trans. Elec. Dev., ED-38, 1685-1692, 1991.
86. O.S. Ang and D.L. Pulfrey, "The Cut-Off Frequency of Base-Graded and Junction-Graded AlGaAs DHBTs", Solid-State Electronics, 34,1325--1328,1991.
87. * H. Zhou and D.L. Pulfrey, "Computation of Transit and Signal Delay Times for the Collector Depletion Region of Gats-Based HBTs", Solid-State Electronics, 35,113--115,1992.
88. V.A. Samuilov, E.A. Bondarionok, D. Shulman and D.L. Pulfrey, "Memory switching effects in a-Si/c-Si heterojunction bipolar structures", IEEE Electron Dev. Lett., 13, 396--398, 1992.
89. * A.R. St. Denis, D.L. Pulfrey and A. Marty, "Reciprocity in heterojunction bipolar transistors", Solid-State Electronics, 35, 1633--1637, 1992.
90. H. Zhou and D.L. Pulfrey, "A new method for estimating the electron concentration in the 2--dimensional electron gas in MODFETs", Solid-State Electronics, 35. 1779--1782, 1992.
91. * H. Zhou and D.L. Pulfrey, "Bipolar effects on the signal delay time in HBTs at high currents", Electron Dev., 40, 44--48, 1993.
92. * D. L. Pulfrey and S. Searles, "Electron quasi-Fermi level splitting at the base-emitter junction of AlGaAs HBTs", IEEE Trans. Elec. Dev., 40, 1183--1185, 1993.
93. A. Marty, T. Camps, J. Tasselli, D.L. Pulfrey and J.P. Bailbe, "A self-consistent dc-ac two-dimensional electrothermal model for GaAlAs/GaAs microwave power HBTs", IEEE Trans. Elec. Dev., 40, 1202--1210, 1993.
94. Q.Z. Liu, D.L. Pulfrey and M.K. Jackson, "Analysis of pin -HBT optical receiver front-ends", IEEE Trans. Elec. Dev., 40, p. 2204--2210, 1993.
95. * S. Searles and D.L. Pulfrey, "Analysis of space-charge-region recombination in HBTs", IEEE Trans. Elec. Dev., 41, 476--483, 1994.