Chapter 30 PROCESSING of INTEGRATED CIRCUITS

Chapter 30 PROCESSING OF INTEGRATED CIRCUITS

Multiple Choice Quiz

There are 29 correct answers in this multiple choice quiz (some questions have multiple answers that are correct). To achieve a perfect score on the quiz, all correct answers must be given. Each correct answer is worth 1 point. Each omitted answer or wrong answer reduces the score by 1 point. Percentage score on the quiz is based on the total number of correct answers.

30.1Silicon is the most widely used semiconductor material for integrated circuits. Which of the following are less common semiconductor materials used for ICs (two best answers): (a) boron, (b) boron nitride, (c) gallium arsenide, (d) germanium, (e) silicon carbide,(f) silicon dioxide, and (g) zirconium?

30.2How many electronic devices would be contained in an IC chip in order for it to be classified in the VLSI category (one best answer): (a) 1000, (b) 10,000, (c) 1 million, or (d) 100 million?

30.3An alternative name for chip in semiconductor processing is which one of the following (one best answer): (a) component, (b) device, (c) die, (d) package, or (e) wafer?

30.4Which one of the following is the source of silicon for semiconductor processing: (a) pure Si found in nature, (b) SiC, (c) Si3N4, or (d) SiO2?

30.5Silicon that has been grown from a melt into a large single-crystal ingotby the Czochralski process is called which one of the following: (a) boule, (b) crystallite, (c) crystalloid, (d) transistor, or (e) wafer?

30.6The air in a clean room is passed through a HEPA filter. HEPA stands for which one of the following: (a) high-efficiency packaging amplifier, (b) high-efficiency passive arresting, (c) high-efficiency particulate air, (d) high-energy processing action, or (e) high-energy particle attenuation?

30.7Which one of the following is the most common form of radiation used in photolithography: (a) electronic beam radiation, (b) incandescent light, (c) infrared light, (d) ultraviolet light, or (e) Xray?

30.8After exposure to light, a positive resist becomes (a) less soluble or (b) more soluble to the chemical developing fluid.

30.9Asilicon dioxidefilm formed on the surface of a silicon wafer by thermal oxidation has a thickness that is (a) greater than, (b) less than, or (c) the same as the layer of substrate silicon used to form it.

30.10Which one of the following is not one of the functions of silicon dioxide in semiconductor processing: (a) provides electrical insulation between levels in multilevel metallization systems, (b) serves as a conducting path between levels in multilevel metallization systems, (c) serves as a mask to prevent diffusion of dopants into silicon, or (d) serves to isolate devices in a circuit?

30.11Epitaxial deposition refers to a process of growing a film onto a substrate so that the film has a crystalline structure that is an extension of the substrate’s structure: (a) true of (b) false?

30.12Vapor phase epitaxy is based on which one of the following: (a) chemical vapor deposition, (b) diffusion, (c) ion implantation, (d) physical vapor deposition, or (e) thermal oxidation?

30.13Which of the following processes are used to add layers of various materials in IC fabrication (three best answers): (a) chemical vapor deposition, (b) diffusion, (c) ion implantation, (d) physical vapor deposition, (e) plasma etching, (f) thermal oxidation, and (g) wet etching?

30.14Which of the following are doping processes in IC fabrication (two best answers): (a) chemical vapor deposition, (b) diffusion, (c) ion implantation, (d) physical vapor deposition, (e) plasma etching, (f) thermal oxidation, and (g) wet etching?

30.15Which one of the following is the most common metal for metallization in a silicon integrated circuit: (a) aluminum, (b) copper, (c) gold, (d) nickel, (e) silicon, or (f) silver?

30.16Which etching process produces the more anisotropic etch in IC fabrication: (a) plasma etching or (b) wet chemical etching?

30.17Which of the following are the two principal packaging materials used in IC packaging: (a) aluminum, (b) aluminum oxide, (c) copper, (d) epoxies, and (e) silicon dioxide?

30.18According to Rent’s rule the number of input/output terminals in an integrated circuit is (a) greater than or (b) less than the number of devices (logic gates) in the IC?

30.19Which one of the following technologies in IC packaging provides the greater packing densities in circuit board assembly: (a) pin-in-hole technology, (b) surface-mount technology, or (c) through-hole technology?

30.20Which one of the following IC packaging styles provides the opportunity for the largest number of terminals in the package: (a) ball grid array, (b) dual in-line package, (c) pin grid array, or (d) square package?

30.21Multiprobe testing is a computer-controlled testing method that is performed on the integrated circuits immediately after they have been separated from the wafer: (a) true or (b) false?

30.22Which of the following metals are commonly used for wire bonding of chip pads to the lead frame (two best answers): (a) aluminum, (b) copper, (c) gold, (d) nickel, (e) silicon, and (f) silver?

30.23Which one of the following major phases in IC processing is the most important in determining the overall yield of ICs: (a) chip separation from the wafer, (b) crystal growing of the starting ingot, (c) packaging of the individual ICs, (d) slicing the ingot into wafers, or (e) wafer processing of the individual ICs on the wafer?

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