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Background Statement for SEMI Draft Document 5845
REAPPROVAL OF SEMI M16-1110
SPECIFICATION FOR POLYCRYSTALLINE SILICON
Notice: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.
Notice: Recipients of this Document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.
Background
Per SEMI Regulations8.9.1, the Originating TC Chapter shall review its Standards and decide whether to ballot the Standards for reapproval, revision, replacement, or withdrawal by the end of the fifth year after their latest publication or reapproval dates.
The Int’l Test Methods TF reviewed and recommended to issue for reapproval ballot.
Per SEMI Procedure Manual (NOTE 19), a reapproval Letter Ballot should include the Purpose, Scope, Limitations, and Terminology sections, along with the full text of any paragraph in which editorial updates are being made.
Voter requests for access to the full Standard or Safety Guideline must be made at least three business days before the voting deadline. Late requests may not be honored.
Review and Adjudication Information
Task Force Review / Committee AdjudicationGroup: / Int’l Test Methods TF / NA Silicon Wafer TC Chapter
Date: / Monday, July 13, 2015 / Tuesday July 14, 2015
Time & Timezone: / 10:30 a.m. – Noon PDT / 1:00 – 4:00 p.m.PDT
Location: / San Francisco Marriott Marquis / San Francisco Marriott Marquis
City, State/Country: / San Francisco, CA / San Francisco, CA
Leader(s): / Dinesh Gupta (STA) / Noel Poduje (SMS)
DineshGupta (STA)
Standards Staff: / Kevin Nguyen (SEMI NA)
408.943.7997
/ Kevin Nguyen (SEMI NA)
408.943.7997
This meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.
Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will not be able to attend these meetings in person but would like to participate by telephone/web, please contact Standards staff.
Check on calendar of event for the latest meeting schedule.
SEMI Draft Document 5845
REAPPROVAL OF SEMI M16-1110
SPECIFICATION FOR POLYCRYSTALLINE SILICON
1 Purpose
1.1 This specification is intended for use in procurement of polycrystalline silicon for growth of electronic grade monocrystalline silicon ingots. Such ingots are sliced into wafers that are subsequently used for the production of semiconductor devices, integrated circuits, and other microelectronic components including microelectromechanical systems (MEMS).
2 Scope
2.1 This specification covers requirements for polycrystalline silicon (poly) used to produce single crystal silicon by either the modified Czochralski (Cz) or float zone (FZ) crystal growth technique for applications in the semiconductor device industry.
2.2 Form and dimensional characteristics are the only standardized properties set forth below. A purchase specification may include requirements for additional physical properties as listed in this specification, together with test methods suitable for determining their magnitudes.
NOTE 1: JEITA has also established a specification for polysilicon.[1] This specification also includes specification limits and specified measurement methods for purity and surface metal contamination. Similarities and differences between this standard and JEITA EM-3601A are discussed in Related Information1.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use.
3 Referenced Standards and Documents
3.1 SEMIStandards
SEMI M59 — Terminology for Silicon Technology
SEMI MF1708 — Practice for Evaluation of Granular Polysilicon by Melter-Zoner Spectroscopies
SEMI MF1723 — Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
SEMI MF1724 — Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy
3.2 ANSIStandards[2]
ANSI/ASQC Z1.4-1993 — Sampling Procedures and Tables for Inspection by Attributes
3.3 ASTMStandards[3]
ASTM E122 — Practice for Choice of Sample Size to Estimate Average Quality of a Lot or Process
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
4 Terminology
4.1 Acronyms, terms, and symbols related to silicon technology, including most of those used in this specification, are listed and defined in SEMI M59.
4.2 Other Definitions Used in this Standard
4.2.1 etched polysilicon — polysilicon that has been etched with acid to remove surface contamination.
4.2.2 lot — all of the material of nominally identical purity and characteristics contained in a single shipment, manufactured with similar processing conditions, and traceable to the manufacturing conditions. A lot may be further defined as the polysilicon produced from one reactor run.
4.2.3 polycrystalline silicon — silicon, formed by chemical vapor deposition from a silicon source gas, having a structure that contains large angle grain boundaries, twin boundaries, or both. Also known as poly, or polysilicon.
NOTE 2: Note that this definition for polysilicon is extended from that given in SEMIM59.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standard(s) set forth herein for any particular application. The determination of the suitability of the standard(s) is solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant literature respecting any materials or equipment mentioned herein. These standards are subject to change without notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and the risk of infringement of such rights are entirely their own responsibility.
This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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[1] JEITA EM-3601A: Standard specification for high purity polycrystalline silicon. Japanese Electronic and Information Technology Industries Association, 3rd Fl., Mitsui Sumitomo Kaijo Bldg. Annex, 11, Kanda Surugadai 3-chome, Chiyoda-ku, Tokyo 101-0062, Japan.
[2] American National Standards Institute, Headquarters: 1819 L Street, NW, Washington, DC20036, USA. Telephone: 202.293.8020; Fax: 202.293.9287. New York Office: 11 West 42nd Street, New York, NY10036, USA. Telephone: 212.642.4900; Fax: 212.398.0023;
[3] American Society for Testing and Materials, 100 Barr Harbor Drive, West Conshohocken, Pennsylvania19428-2959, USA. Telephone: 610.832.9585; Fax: 610.832.9555;