1. Name and Academic Rank

Neil Goldsman, Professor

2. Degrees with fields, institution, and dates
1989Ph.D. in Electrical Engineering, CornellUniversity
1984M.E. in Electrical Engineering, CornellUniversity

1981B.A. in Physics, CornellUniversity

3. Number of years service on this faculty, including date of original appointment and dates of advancement in rank

1999-presentProfessor

1995-1999Joint appointment with Institute for Systems Research

1993Associate Professor

1988Assistant Professor

4. Other Related Experience – teaching, industrial, etc.
1980-1982Electronics Designer for Laboratory Instrumentation, Laboratory of Atomic and Solid.

State Physics, CornellUniversity

1998-presentCollaborative research with industry: Intel Corporatation

LSI Logic Corporation (1997- 2001); Digital Equipment Corporation (1996-1997),

5. Consulting, Patents, etc.

C-C. Shen, M. Peckerar and N. Goldsman, A High Performance EEPROM Cell," US provisional patent filed on April 9, 1998.

6. State(s) in which registered

N/A

7. Principal publications of last five years

More than 100 journal and conference papers have been published or accepted for publication, including the following selected from the last five years:

  1. N.Goldsman, C.-K. Lin, Z.Han, and C.-K. Huang, ``Advances in the SphericalHarmonic Boltzmann/Wigner Approach to Device Simulation,'' Superlattices and Microstructures, vol.27, no.2-3, pp.159--175, 2000.
  2. N.Dhar, N.Goldsman, and C.E.C. Wood, ``Telurium desorption kinetics from(112) silicon: Si-Te bond energy,'' Phys. Rev. B, vol.61 (12),pp.8256--8261, 2000.
  3. N.Goldsman, C.-K. Lin, Z.Han, and C.-K. Huang, ``Advances in the sphericalharmonic Boltzmann/Wigner approach to device simulation,'' Superlattice and Microstructures, vol.27, no.2-3, pp.159--175, 2000.
  4. M.Huang, I.Mayergoyz, and N.Goldsman, ``Numerical simulation of small-signalmicrowave performance of 4H-SiC MESFET,'' Solid State Electronics, vol.44, pp.1281--1287, 2000.
  5. Safwat, C.Lin, J.Kim, F.Johnson, W.J. WB, N.Goldsman, and C.Lee, ``Investigation of the optical spot position on the performance ofmetal semiconductor metal structures: novel application,'' Solid State Electronics, vol.44, pp.2077--2080, 2000.
  6. N.Dhar, P.Boyd, M.Martinka, J.Dinan, L.Almeida, and N.Goldsman, ``CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics,'' Journal of Electronic Materials, vol.29 (6),pp.748--753, 2000.
  7. G. Pennington and N. Goldsman, "Empirical Pseudopotential Band Structure of 3C, 4H, and 6HSiC Using Transferable Semiempirical Si and C Model Potentials,"Physical Review B, 64, pp. 045104-1 to 045104-10, 2001.
  8. S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C.J. Scozzie and A. Lelis ``Characterization and Physics-Based Modeling of 6H-SiC MOSFETs," Journal of Applied Physics, vol.92, no.7, pp.4053-4061, 2002.
  9. Akturk, N. Goldsman and G. Metze, ``Faster CMOS Inverter Switching Obtained withChannel Engineered Asymmetrical Halo Implanted MOSFETs," SolidState Electronics,vol.47, pp.185--192, 2003.
  10. C.K. Huang and N. Goldsman, ``Non-equilibrium modeling of tunneling gate currents in nanoscale MOSFETs,'' Solid State Electron 47 (4): pp. 713-720, 2003.
  11. G. Pennington and N. Goldsman, ``Monte Carlo study of electron transport in a carbon nanotube,''IEICE Trans. on Electron, E86C (3): pp. 372-378, MAR 2003.
  12. G. Pennington and N. Goldsman, ``Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes," Phys. Rev. B, 68 (4): Art. No. 045426-1 -- 11 , 2003.
  13. N. Goldsman and C.K. Huang, "Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrodinger and Boltzmann System ofEquations," International Journal of High Speed Electronics and Systems, Vol. 13, No. 3, pp. 803-822, 2003.
  14. G. Pennington and N. Goldsman, ``Self-consistent calculations for n-type hexagonal SiC inversion layersJournal Applied Physics, 95 (8), pp. 4223-4234, 2004.
  15. Han ZY, Goldsman N, Lin CK Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner-Boltzmann equationSolid State Electron, 49 (2): 145-154, 2005
  16. Powell SK, Goldsman N, Lelis A, et al. High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistorsJournal of Applied Physics,97 (4): Art. No. 046106, 2005
  17. Akturk A, Pennington G, Goldsman NQuantum modeling and proposed, designs of CNT-embedded nanoscale MOSFETs, IEEE Trans. on Elect. Dev, 52 (4): 577-584, 2005

8. Scientific and professional societies of which a member

9. Honors and Awards

Post Merit Scholarship:
Awarded by the Post Foundation for academic achievement to help pursue graduate education.
George Corcoran Award:
Given annually to a University of Maryland EE faculty member for outstanding contributions to electrical engineering education.

National Science Foundation Research Initiation Award:

Project Title: “Efficient and Comprehensive Semiconductor Device Modeling.''

Best Professor of the Year Award:

Presented by the University of Maryland IEEE Student Branch for outstanding contributions to teaching.

Benjamin Dasher Award for best paper at IEEE Frontiers in Education Conference

10. Institutional and professional service in the last five years

Professional Community Service
Journal Reviewer:

Journal of Applied Physics; Applied Physics Letters, IEEE Transactions on Electron Devices,

IEEE Electron Device Letters, IEEE Transactions on CAD, Solid-State Electronics, Electronics Letters

Proposal Reviewer and Panel Member:

Served on several review panels for National Science Foundation.

Session Organizer and Chair:

Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits

Semiconductor Research Corporation Workshop on Hierachical Device Simulation via a Web-Based Simulation Laboratory: Section organizer and presenter

National Technology Roadmap for Semiconductors: Co-Author of section on device modeling needs; invited for final review

International Conference on Simulation of Semiconductor Processes and Devices: Conference Committee member

Departmental Service: Served on more than fifteen department committees.

College Service: Served on three college committees.