Institute of Electrical and Electronics Engineers

Technical Co-sponsors:

-Electron Devices Society,

-Institute of Electrical and Electronics Engineers,

-The Hong Kong Polytechnic University.

Welcome from the General Chair

Sessions

Venue Map

Committees

Sessions

June 3 (Monday) / June 4 (Tuesday) / June 5 (Wednesday)
Opening Ceremony
(8:45 – 9:15) / T1:
Graphene Nanowires / T2
Si Nano Devices / T3:
Power Electronics Energy Harvesting / W1:
ESD and Power Devices / W2:
Novel Circuits / W3:
Multiscale Modeling
Plenary Session
(9:15 – 10:45)
Break (10:45- 11:00) / Break (10:00 – 10:15) / Break(10:00 – 10:15)
Plenary Session
(11:00 – 12:30) / T4:
High-k & Device Reliability / T5
TCAD and Modeling / T6:
RF Circuits / W4:
Sensors MEMS 1 / W5:
Variability & Reliability / W6:
First Principles Simulation
Lunch (12:30 – 14:10) / Lunch (12:05 – 14:00) / Lunch (12:05 – 14:00)
M1:
Flexible & Organic Electronics 1 / M2:
Memory Technology 1 / M3:
ESD and RF Circuits / T7:
Thin Film Transistor / T8:
Emerging Device Technologies / T9:
Circuit System Reliability / W7:
Sensors MEMS 2 / W8:
Analog Circuits / W9:
Compound SiGe Devices
Break (15:50 – 16:05) / Break (15:55 – 16:15) / Break (15:50 – 16:05)
M4:
Flexible & Organic Electronics 2 / M5:
Power Devices / M6:
A/D Converters / T10:
Memory Technology 2 / T11:
Photonics and Device Technologies / T12:
Digital Circuits
Break (17:35 – 17:45) / Break (17:45 – 18:00)
Reception andPoster Session
(17:45– 20:00) / Banquet (18:00 – 20:00)

June 3, 2013(Monday)

8:30-8:45 Registration

Open Ceremony and Plenary Session June 3 Monday (8:45 – 12:30)

Venue:Room Z2-001

Session Chairs: J. J. Liou and C. Surya

8:45 –
9:15 / Open Ceremony
9:15 -
10:00 / The Future of Computing is Mobile
Nick Yu
Qualcomm, USA
10:00-10:45 / Revolutionizing Medical Device Design
Charles Sodini
MIT, USA
10:45-11:00 / Break
11:00 –
11:45 / Low Frequency Noise Performance of Gate-First and Replacement Metal Gate CMOS Technologies
C. Claeys, J. W. Lee, E. Simoen, A. Veloso, N. Horiguchi and V. Paraschiv
IMEC, Belgium
11:45 –
12:30 / InGaAs Nanoelectronics: from THz to CMOS
Jesús A. del Alamo
MIT, USA

Oral Sessions

M1: Flexible and Organic Electronics 1 June 3, Monday (14:10 - 15:50)

Venue: Room Z2-003

Session Chairs: M. J. Deen and J. N. Burghartz

14:10 -14:40 / (Invited) Flexible Electronics – Opportunities and Challenges
M. J. Deen
McMaster University, Canada
14:40 -
15:10 / (Invited) Ultra-Thin Chips for Flexible Electronics
J. N. Burghartz, E. Angelopoulos, W. Appel, S. Endler, S. Ferwana, C. Harendt, M. Hassan, H. Rempp, H. Richter and M. Zimmermann
IMS CHIPS, Germany
15:10 -
15:30 / Current Uniformity Improvement in Flexible Resistive Memory
Z.-W. Zheng, C.-H. Cheng, K.-I. Chou, M. Liu and A. Chin
Chinese Academy of Sciences, Beijing, China; National Taiwan Normal University, Taipei, Taiwan; National Chiao Tung University, Hsinchu, Taiwan
15:30 -
15:50 / Process Variability Influence on Complementary Organic Circuits Characteristics
M. Guerin, E. Bergeret, E. Bènevent, P. Pannier,A. Daami, R. Coppard
IM2NP, France; CEA-Grenoble, France

M2: Memory Technology 1 June 3, Monday (14:10 - 15:50)

Venue: Room Z2-035

Session Chairs: A. Chin and P. T. Lai

14:10 -14:30 / GeO2/PZT Resistive Random Access Memory Devices with Ni Electrode
K.-I. Chou, C.-H. Cheng and A. Chin
National Chiao Tung University, Taiwan; National Taiwan Normal University,Taiwan
14:30 -
14:50 / Improved Performance of Hf-Doped BaTiO3 as Charge-Trapping Layer for Flash Memory Applications
X. D. Huang and P. T. Lai
The University of Hong Kong, Hong Kong
14:50 -
15:10 / RTN Analysis with FHMM as a Tool for Multi-Trap Characterization in HfOx RRAM
F. M. Puglisi and P. Pavan
Università degli Studi di Modena e Reggio Emilia, Italy
15:10 -
15:30 / Characterization of FinFET SRAM Cells with Asymmetrically Gate Underlapped Bitline Access Transistors under Process Parameter Fluctuations
S. M. Salahuddin, H. Jiao, and V. Kursun
The Hong Kong University of Science and Technology, Hong Kong
15:30-15:50 / Field Effect Diode Memory Cell: Physics and Design
A. Z. Badwan, Z. Chbili, Y. Yang, Q. Li, D. E. Ioannou and A. A. Salman
George Mason University, USA; Texas Instruments Incorporated, USA

M3: ESD and RF Circuits June 3, Monday (14:10 - 15:50)

Venue: Room Z2-032

Session Chairs: M.-D. Ker and W.-K. Yeh

14:10 -14:40 / (Invited) On-Chip ESD Protection Designs in RF Integrated Circuits for Radio and Wireless Applications
M.-D. Ker and C.-Y. Lin
National Chiao-Tung University, Taiwan
14:40 -
15:10 / (Invited) Concurrent Design of Wideband RFIC and ESD
X. Wang, B. Zhao, L. Wang, R. Ma, Z. Dong, C. Zhang and A. Wang
Fairchild Semiconductor, USA; University of California, USA
15:10 -
15:30 / SCR Device for On-Chip ESD Protection in RF Power Amplifier
C.-Y. Lin and M.-D. Ker
National Chiao Tung University, Taiwan
15:30 -
15:50 / Device Variability and Reliability Check for Ultra-Thin-Body and Bulk Oxide CMOSFETs
W.-K. Yeh, C.-M. Lai, L.-K. Chin and P.-Y. Chen
National University of Kaohsiung, Taiwan; I-Shou University, Taiwan

M4: Flexibleand Organic Electronics 2 June 3, Monday (16:05 - 17:25)

Venue: Room Z2-003

Session Chairs: M. J. Deen and J. N. Burghartz

16:05-
16:25 / Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics
H.-H. Hsu, C.-Y. Chang, C.-H. Cheng, S.-H. Yu and C.-Y. Su
National Chiao Tung University, Taiwan; National Taiwan Normal University, Taiwan; Chang Gung University, Tao-Yuan, Taiwan
16:25-
16:45 / Room-Temperature Fabrication of Flexible Gallium-Doped Zinc Oxide Thin-Film Transistors on Plastic Substrates
F. Huang, D. Han, D. Shan, Y. Tian, S. Zhang, Y. Cong, Y. Wang, L. Liu, X. Zhang and S. Zhang
Peking University, China
16:45-
17:05 / A Study on the Electrical Characteristics of Copper Phthalocyanine-Based OTFTs with ZrTaO as Gate Dielectric
W. M. Tang, M. G. Helander, M. T. Greiner, J. Qiu, Z. H. Lu and W. T. Ng
University of Toronto, Canada; The Hong Kong Polytechnic University, Hong Kong
17:05-
17:25 / Laser Patterned Junctionless Neuron Thin-Films Transistor Arrays
L. Q. Zhu and Q. Wan
Chinese Academy of Sciences, China

M5: Power Devices June3, Monday (16:05 - 17:35 pm)

Venue: Room Z2-035

Session Chairs: M. Ostling and E. Sangiorgi

16:05-
16:35 / (Invited) SiC Device Technology for Energy Efficiency and High Temperature Operation
M. Östling
KTH Royal Institute of Technology,, Sweden
16:35-
17:05 / (Invited)TCAD Numerical Simulation of Metal Wrap through Solar Cell
P. Magnone, C. Fiegna, E. Sangiorgi, D. Tonini and M. Frei
University of Bologna and IUNET Cesena (FC), Italy; Applied Materials, Italy and USA
17:05-
17:25 / Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs
M. Weiß, A. K. Sahoo, C. Raya, M. Santorelli, S. Fregonese, C. Maneux and T. Zimmer
Université de Bordeaux, France; XMOD Technologies, France
17:25-
17:45 / All GaN-on-Si High Power Module Design and Performance Evaluation
S. Cheng, C.-A. Wang, P.-C. Chou, W.-H. Chieng, and E. Y. Chang
National Chiao-Tung University, Taiwan

M6: A/D Converters June 3, Monday (16:05 - 17:25)

Venue: Room Z2-032

Session Chair: K. N. Leung

16:05-
16:25 / A 16-bit 1MHz 44mW SAR ADC Achieving Signal-to-Noise-and-Distortion-Ratio of 94.3dB
Y. Y. Chi, D. M. Li and Z. H. Wang
Tsinghua University, China
16:25-
16:45 / A 1.2V Power Adaptable 95-to-67dB DR 2-2 Mash Delta-Sigma ADC with Configurable OSRH. J. Wu, B. Li, H. B. Zhang, L. L. Zou, L. Y. Zeng and Z. P. Li
South China University of Technology, China; Guangzhou Runxin Information and Technology Co.,Ltd., China
16:45-
17:05 / A Compact Low-Power Flash ADC Using Auto-Zeroing with Capacitor Averaging
C.-C. Lee, C.-M. Yang and T.-H. Kuo
National Cheng Kung University, Taiwan
17:05-
17:25 / A 6-bit Subranging ADC with Single CDAC Interpolation
H. Lee, M. Miyahara and A. Matsuzawa
Tokyo Institute of Technology, Japan

June 4, 2012 Tuesday

T1: Graphene and Nanowires June 4, Tuesday (8:30 - 9:50)

Venue: Room Z2-003

Session Chairs: H.-S. P. Wong and V. K. Arora

8:30-
9:00 / (Invited) High-Field Transport in Graphene and Carbon Nanotubes
V. K. Arora and M. L. P. Tan
Universiti Teknologi, Malaysia; Wilkes University, USA
9:00-
9:30 / (Invited) Novel Graphene-Based Devices
H. Tian, Y. Yang, D. Xie, H.-Y. Chen,H.-S. Philip Wong, T.-L. Ren
Tsinghua University, China; Stanford University, USA
9:30-
9:50 / The Electronic Properties of Ultra-Narrow Armchair MoS2 Nanoribbons
Z. Xin, L. Zeng, Z. Lu, Y. Hou, L. Liu, J. Kang, G. Du and X. Liu
Peking University, China; Peking University Shenzhen Graduate School, China
9:50-10:10 / Modeling for Contact Resistance between Metallic Carbon Nanotubes and Semiconducting Substrates of Field Emission Devices
L. Liu and B. Li
South China University of Technology, China

T2: Silicon Nano Devices June 4, Tuesday (8:30 - 10:00)

Venue: Room Z2-035

Session Chairs: R. Huang and M. Chan

8:30-
9:00 / (Invited) Novel Silicon-Based Tunneling FET with Junction Engineering andGateConfiguration for Low Power Applications
R. Huang, Q. Huang, Z. Zhan, C. Wu, Y. Qiu and Y. Wang
Peking University, China
9:00-
9:20 / Vertical Nanowire MOSFET Parasitic Resistance Modeling
S. Maheshwaram, S. K. Manhas, G. Kaushal and B. Anand
Indian Institute of Technology Roorkee, India
9:20-
9:40 / High Performance Topological Insulator Nanowire Field-Effect Transistors
Q. Li, H. Zhu, E. Zhao, H. Yuan, Dimitris E. Ioannou, Curt A. Richter, H. Li and O. Kirillov
George Mason University, United States; National Institute of Standards and Technology, USA
9:40-
10:00 / Investigation of Ultra-Thin BOX Junctionless Transistor at Channel Length of 20 nm
C. Sahu, J. Singh and P. N. Kondekar
IIITDM , India

T3: Power Electronics and Energy Harvesting June 4, Tuesday (8:30 - 10:00)

Venue: Room Z2-032

Session Chairs: H. Lee and P. K. T. Mok

8:30-
9:00 / (Invited) Power- & Area-Efficiency Enhancement Techniques of Switched-Capacitor Power Converters for Low-Power Applications
H. Lee and Z. Hua
University of Texas at Dallas, United States
9:00-
9:20 / A Low-Voltage High-Efficiency Voltage Doubler for Thermoelectric Energy Harvesting
J. Kim, P. K. T. Mok, C. Kim and Y. K. Teh
The Hong Kong University of Science and Technology, Hong Kong; Korea University, Korea
9:20-
9:40 / A 99%-Efficiency 1-MHz 1.6-kW Zero-Voltage-Switching Boost Converter Using Normally-off GaN Power Transistors and Adaptive Dead-Time Controlled Gate Drivers
J. Xue, K. D. T. Ngo and H. Lee
University of Texas at Dallas, USA; Virginia Tech., USA
9:40-
10:00 / Design of Coupled Inductor-Based Boost Converter for Ultra Low Power Thermoelectric Energy Harvesting using Pulse Transformer with 75mV Start-up Voltage
Y.-K. Teh and P. K. T. Mok
The Hong Kong University of Science and Technology, Hong Kong

T4: Higk-k Dielectrics and Device Reliability June 4, Tuesday (10:15 - 12:05)

Venue: Room Z2-003

Session Chairs: K. L. Pey and J. Molina

10:15-
10:45 / (Invited) Impact of Local Variations in High-k Dielectric on Breakdown and Recovery Characteristics of Advanced Gate Stacks
K. L. Pey, K. Shubhakar, N. Raghavan, X. Wu and M. Bosman
Singapore University of Technology and Design, Singapore; Nanyang Technological University, Singapore; Institute of Materials Research and Engg., Singapore
10:45-
11:05 / Evaluation of Interface-States Density for MOSFETs Fabricated on High-Index (114) Silicon Surfaces
J. Molina, C. Zuniga, W. Calleja, A. Torres, P. Rosales, E. Gutierrez and Don. L. Kendall.
INAOE, Mexico; StarMega Corp., USA
11:05-
11:25 / High-Quality HfSiON Gate Dielectric and its Application in a Gate-Last NMOSFET Fabrication
G. Xu, Q. Xu, H. Yin, H. Zhou, T. Yang, J. Niu, L. Meng, X. He, G. Wang, J. Yu, D. Wang, J. Li, J. Yan, C. Zhao and D. Chen
Chinese Academy of Sciences, China
11:25-
11:45 / Low Frequency Drain Noise Characteristics of Polarization-Engineered AlGaN/GaN HFETs
F. Manouchehri, P. Valizadeh and M. Z. Kabir
Concordia University, Canada
11:45-
12:05 / The Recovery Effect of Hot-Carrier Degradation under Dynamic Stress Condition for SOI-nLDMOS Device
C. Zhang, S. Liu, W. Sun, W. Su, Y. Liu, G. Chen and X. He
Southeast University, China; CSMC Technologies Corporation, China

T5: TCAD and Modeling June 4, Tuesday (10:15 - 12:05)

Venue: Room Z2-035

Session Chairs: S. Selberherr and P. K. T. Mok

10:15-
10:45 / (Invited) Physically Based Models of Electromigration
R. L. de Orio and S. Selberherr
Institute for Microelectronics, Austria
10:45-
11:05 / Numerical Study on Nanowire Tunnel FET with Dynamic Threshold Operation ArchitectureA. Zhang, J. He, X. Zhu, Y. Hu, H. Wang, W. Deng, H. He, Y. Zhu, X. Zhang, M. Chan
PKU-HKUST Shenzhen-Hong Kong Institution, China; Hong Kong University of Science and Technology, Hong Kong
11:05-
11:25 / Compact Model and Projection of Silicon Nanowire Tunneling Transistors (NW-tFETs)
Q. Shao, C. Zhao, C. Wu, J. Zhang, L. Zhang and Z. Yu
Tsinghua University, China
11:25-
11:45 / Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage
J. Du, K. Ma, Z. Zhao and Q. Yu
University of Electronic Science and Technology of China, China
11:45-
12:05 / A Physical Surface Potential Model of a-IGZO TFTs
X. Li, B. Li and R. Yao
South China University of Technology, China

T6: RF CircuitsJune 4, Tuesday (10:15 - 12:05)

Venue: Room Z2-032

Session Chairs: J. C.S. Woo and P. Pong

10:15-
10:45 / (Invited) Design of Sub-100nm SOI CMOS for RF Switch Application
A. Sajjadi and J. C. S. Woo
UCLA, USA
10:45-
11:05 / 2-GHz Band Ultra-Low-Voltage LC-VCO IC in 130nm CMOS Technology
X. Yang, K. Xu, W. Wang, Y. Uchida and T. Yoshimasu
Waseda University, Japan
11:05-
11:25 / Cascaded Optical Band Pass Filters in Radio-over-Fiber Link
D. B. Chen, C.-K. Sun and P. K. L. Yu
University of California at San Diego, USA; Titan Photonics, USA
11:25-
11:45 / Design of CMOS Differential LNA at 2.4GHz
M. Muhamad, N. Soin, H. Ramiah, N. M. Noh and W. K. Chong
Universityi Teknologi MARA, Shah Alam; University of Malaya; Universiti Sains Malaysia
11:45-
12:05 / A Dual-Mode Second Order Sigma-Delta Modulator Employing Single Opamp for GSM and WCDMA Applications
Gh. Fahmy, D. Kanemoto, H. Kanaya, R. Pokharel and K. Yoshida
Graduate School of Information Science and Electrical Engineering; EJUST Center; Kyushu University, Japan

T7: Thin Film TransistorsJune 4, Tuesday (14:00 - 15:50)

Venue: Room Z2-003

Session Chairs: V. R. Rao and J.-J. Huang

14:00-
14:30 / (Invited)A TFT Embedded Cantilever (CantiFET) Platform for Sensor Applications ?
P. Ray, V. Seena and V. R. Rao
Indian Institute of Technology, India
14:30-
15:00 / (Invited)Small Low-Frequency Noise IGZO TFTs Using a Bilayer HfO2/SiO2 Dielectric and the Applications of IGZO TFTs to biosensors
L.-Y. Su, H.-Y. Lin, H.-K. Lin and J.-J. Huang
Graduate Institute of Photonics and Optoelectronics, Taiwan; National Taiwan University, Taiwan
15:00-
15:20 / Influence of Ar/O2 Ratio during IGZO Deposition on the Electrical Characteristics of a-IGZO TFT with HfLaO Gate Dielectric
L. X. Qian and P. T. Lai
The University of Hong Kong, Hong Kong
15:20-
15:40 / A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric
K.-I. Chou, H.-H. Hsu, C.-H. Cheng, K.-Y. Lee, S.-R. Li and A. Chin
National Chiao Tung University, Taiwan; National Taiwan Normal University, Taiwan
15:40-
16:00 / Fabrication and Characteristics of Fully Transparent Aluminum-Doped Zinc Oxide Thin-Film Transistors
D. Shan, D. Han, F. Huang, Y. Tian, S. Zhang, Y. Cong, Y. Wang, L. Liu, X. Zhang and S. Zhang
Peking University, China; Shenzhen Graduate School Peking University, China

T8: Emerging Device Technologies June 4, Tuesday (14:00 - 15:50)

Venue: Room Z2-035

Session Chairs: H.-S. Wong and T. K. Chiang

14:00-
14:30 / (Invited)Compact Models of Emerging Devices
C.-S. Lee, S. Yu, X. Guan, J. Luo, L. Wei*, H.-S. Philip Wong
Stanford University, USA; Massachusetts Institute of Technology, USA
14:30-
14:50 / A Simple Scaling Theory for Fully-Depleted Multiple-Gate MOSFETs: with DIBL Resistance Included
T. K. Chiang, H. W. Chang and G. W. Liou
National University of Kaohsiung, Taiwan
14:50-
15:10 / Realization of High Efficiency 4H-SiC IMPATT Diode Using Optimized Doping Steps
G. N. Dash, J. Pradhan, S. K. Swain and S. R. Pattanaik
Sambalpur University, India; Apex Institute of Technology and Management, India
15:10-
15:30 / A Simple Leakage Current Model for Polycrystalline Silicon Nanowire Thin-Film Transistors
H. He, J. He, W. Deng, H. Wang, Y. Hu, X. Zhu, X. Zheng
PKU-HKUST Shenzhen-Hong Kong Institution, China; Peking University, China; Hong Kon gUniversityy of Science and Technology, Hong Kong; South China University of Technology, China
15:30-
15:50 / Characteristics of Submicron-Footprint TiO2 Based AlGaN/GaN MOSHEMT on SiC Substrate
D. Meng, S. Lin, P. W. Cheng, M. Wang, J. Wang, Y. Hao, Y. Zhang, K. M. Lau and W. Wu
Peking University, China; Chinese Academy of Sciences, China; Hong Kong University of Science and Technology, Hong Kong

T9: Circuit and System Reliability June 4, Tuesday (14:00 - 15:50)

Venue: Room Z2-032

Session Chair: K. N. Leung

14:00-
14:30 / (Invited) Sound Monitoring Based Wireless Healthcare and a Typical Implementation for Heart Rate Monitoring
Z. Wang, K. Yang, W. Wang, H. Jiang, S. Wu, Q. Lin and W. Jia
Tsinghua University, China; Research Institute of Tsinghua University in Shenzhen, China
14:30-
14:50 / Data Retention Time of a New Composed Cell for Dynamic Random Access Memory
Y. Riho and K. Nakazato
Nagoya University, Japan
14:50-
15:10 / A Ring Oscillator Based Reliability Structure for NBTI & PBTI Measurement
X. Wang, J. Hong, Y. He, G. Zhang, L. Han and X. Zhang
Peking University, China
15:10-
15:20 / A Combined Countermeasure against DPA and Implementation on DES
R. Li, X. X. Cui, W. Wei, D. Wu, K. Liao, N. Liao, K. S. Ma, D. Yu and X. Cui
Peking University, China
15:20-
15:50 / Test Pattern Generation for Static Burn-in Based on Equivalent Fault Model
X. Cui, Z. Qian, X. Shi and C.-L. Lee
Peking University Shenzhen Graduate School, China

T10: Memory Technology 2 June 4, Tuesday (16:05 - 17:45)

Venue: Room Z2-003

Session Chair: J. Molina

16:15-
16:35 / Self-Compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices
Y. Hou, B. Chen, B. Gao, Z. Y. Lun, Z. Xin, R. Liu, L. F. Liu, D. D. Han, Y. Wang, X. Y. Liu and J. F. Kang
Peking University, China
16:35-
16:55 / Effect of Oxygen Profiles on the RS Characteristics of Bilayer TaOx/TaOy Based RRAM
X. Li, H. Wu, M. Wu, N. Deng and H. Qian
Tsinghua University, China
16:55-
17:15 / Ultra-Low RESET Current RRAM Device by Side-RESET Operation Method
H. Sun, H. Lv, Q. Liu, S. Long, M. Wang, H. Xie, X. Liu, X. Yang, J. Niu and M. Liu
Institute of Microelectronics of Chinese Academy of Science, China
17:15-
17:35 / A Novel Design of Super-Capacitor Based on Black Silicon with Atomic Layer Deposition
L. Zhang, D. Zhao, J. He, X. Huang, F. Yang and D. Zhang
Peking University, China

T11: Photonics and Device Technologies June 4, Tuesday (16:05 - 17:45)

Venue: Room Z2-035

Session Chair: H. P. Ho

16:05-
16:25 / Study of Porous Silicon Substrate for the Integration of Radio Frequency Monolithic Circuits
M. Capelle, J. Billoué, G. Gautier, and P. Poveda
Université François Rabelais, France; STMicroelectronics, France
16:25-
16:45 / Integrated CMOS Photodetectors for Short Range Optical Communication
Z. Hou, Q. Pan, Y. Li, S. Feng, A. W. Poon and C. P. Yue
The Hong Kong University of Science and Technology, Hong Kong
16:45-
17:05 / High UV-Visible Rejection Ratio of Dual-Wavelength Detecting MISIM UV Sensor with a Thin Al2O3 Layer
C.-J. Lee, H.-G. Cha, C.-H. Won, J.-H. Lee and S.-H. Hahm
Kyungpook National University, Korea
17:05-
17:25 / Temperature-Dependent Study of Gate-Lag and RDS-Dispersion of Island-, Fin-, and Mesa-Isolated AlGaN/GaN HFETs
Md J. Sikder, A. Loghmany and P. Valizadeh
Concordia University, Canada
17:25-
17:45 / Strain Effects on Valence Band Structure of In0.7 Ga0.3 As: From Bulk to Thin Film
P. Chang, X. Liu, L. Zeng, J. Qin and G. Du
Peking University, China

T12: Digital Circuits June 4, Tuesday(16:05 - 17:45)

Venue: Room Z2-032

Session Chair: K. P. Pun

16:05-
16:25 / A CMOS Time-to-Digital Converter for Multi-Voltage Threshold Method in Positron Emission Tomography
Y. Li, H. Yu, L. Jiang, Z. Ji, J. Zhu, M. Niu and P. Xiao
Shenzhen University, China; Huazhong University of Science and Technology, China
16:25-
16:45 / Design a Fast CAM-Based Information Detection System on FPGA and 0.18um ASIC Technology
D.-H. Le, K. Inoue and C.-K. Pham
The University of Electro-Communications Tokyo, Japan; Advanced Original Technologies, Japan
16:45-
17:05 / A Multi-Band Fully Differential Fractional-N PLL for Wideband Reconfigurable Wireless Communication
X. Liu, W. Lou, L. Liu and N. Wu
Chinese Academy of Sciences, China
17:05-
17:25 / A Low-Spurious Low-Power 12-bit 300MS/s DAC with 0.1mm2 in 0.18um CMOS Process
Wei-Te Lin and Tai-Haur Kuo
National Cheng Kung University, Tainan

June 5, 2012 Wednesday

W1: ESD and Power Devices June 5, Wednesday (8:30 - 10:00)

Venue: Room Z2-003

Session Chairs: Z. Liu and P. K. T. Mok