1.M. L. Cohen, Electron-Phonon Self-Energies in Many-Valley Semiconductors, Phys. Rev

M. L. Cohen

Publications

Page 1

PUBLICATIONS

Marvin L. Cohen

1.M. L. Cohen, "Electron-phonon self-energies in many-valley semiconductors," Phys. Rev. 128, 131 (1962).

2.D. Brust, M. L. Cohen, and J. C. Phillips, "Reflectance and photoemission from Si," Phys. Rev. Lett. 9, 389 (1962).

3.M. L. Cohen, "The existence of a superconducting state in semiconductors," Rev. Mod. Phys. 36, 240 (1964).

4.M. L. Cohen, "Superconductivity in many-valley semiconductors and in semi-metals," Phys. Rev. 134, A511 (1964).

5.J. F. Schooley, W. R. Hosler, and M. L. Cohen, "Superconductivity in semiconducting SrTiO3," Phys. Rev. Lett. 12, 474 (1964).

6.J. F. Schooley, W. R. Hosler, E. Ambler, J. H. Becker, M. L. Cohen, and C. S. Koonce, "Dependence of the superconducting transition temperature on carrier concentration in semiconducting SrTiO3," Phys. Rev. Lett. 14, 305 (1965).

7.M. L. Cohen and J. C. Phillips, "Spectral analysis of photoemissive yields in Si, Ge, GaAs, GaSb, InAs, and InSb," Phys. Rev. 139, A912 (1965).

8.T. K. Bergstresser, M. L. Cohen, and E. W. Williams, "Reflectivity and band structure of GaAs, GaP, and Ga(As ,P) alloys," Phys. Rev. Lett. 15, 662 (1965).

9.M. L. Cohen and T. K. Bergstresser, "Band structures and pseudopotential form factors for fourteen semiconductors of the diamond and zincblende structures," Phys. Rev. 141, 789 (1966).

10.W. Saslow, T. K. Bergstresser, and M. L. Cohen, "Band structure and optical properties of diamond," Phys. Rev. Lett. 16, 354 (1966).[Erratum: Phys. Rev. Lett. 21, 715 (1968)]

11.T. K. Bergstresser and M. L. Cohen, "The electronic structure of hexagonal zinc sulfide," Phys. Lett. 23, 8 (1966).

12.M. L. Cohen and C. S. Koonce, "Superconductivity in degenerate semiconductors," J. Phys. Soc. Japan 21 (Supplement), 633 (1966).

13.M. L. Cohen, P. J. Lin, D. M. Roessler, and W. C. Walker, "Ultraviolet optical properties and electronic band structure of magnesium oxide," Phys. Rev. 155, 992 (1967).

14.M. L. Cohen, C. S. Koonce and M. Y. Au-Yang, "A mechanism for increasing the superconducting transition temperature," Phys. Lett. 24A, 582 (1967).

15.W. Saslow, T. K. Bergstresser, C. Y. Fong, M. L. Cohen, and D. Brust, "Pseudopotential calculation for 2 for the zincblende structure: GaAs," Solid State Comm. 5, 667 (1967).

16.C. S. Koonce, M. L. Cohen, J. F. Schooley, W. R. Hosler, and E. R. Pfeiffer, "Superconducting transition temperatures of semiconducting SrTiO3," Phys. Rev. 163, 380 (1967).

17.Y. R. Shen, M. Y. Au-Yang, and M. L. Cohen, "Theory of self-trapped filaments of light," Phys. Rev. Lett. 19, 1171 (1967).

18.P. J. Lin, W. Saslow, and M. L. Cohen, "Analysis of the optical properties and electronic structure of SnTe using the empirical pseudopotential method," Solid State Comm. 5, 893 (1967).

19.T. K. Bergstresser and M. L. Cohen, "Electronic structure and optical properties of hexagonal CdSe, CdS, and ZnS," Phys. Rev. 164, 1069 (1967).

20.M. L. Cohen, "Pseudopotential calculations for II-VI compounds," in II-VI Semiconducting Compounds—1967 International Conference, ed. D. G. Thomas, (W. A. Benjamin, Inc., New York, 1967), p.462.

21.C. Y. Fong, W. Saslow, and M. L. Cohen, "Pseudopotential calculation of the optical constants of MgO from 7-28 eV," Phys. Rev. 168, 992 (1968).

22.C. Y. Fong and M. L. Cohen, "Band structure and ultraviolet optical properties of sodium chloride," Phys. Rev. Lett. 21, 22 (1968).

23.M. Y. Au-Yang and M. L. Cohen, "Meson captures in solids," Phys. Rev. 174, 468 (1968).

24.M. L. Cohen, "Recent pseudopotential calculations in solids," Proc. Nat. Acad. Sci. 61, 61144(1968).[Please note wrong page number]

25.M. L. Cohen, Y. Tung, and P. B. Allen, "Optical properties, band structure, and superconducting properties of SnTe and GeTe," J. Phys. (Paris) 29, 163 (1968).

26.M. Y. Au-Yang and M. L. Cohen, "Electronic structure and dielectric function of Mg2Si," Solid State Comm. 6, 855 (1968).

27.P. B. Allen, M. L. Cohen, L. M. Falicov, and R. V. Kasowski, "Superconductivity and band structure from a single pseudopotential: Zinc and cadmium," Phys. Rev. Lett. 21, 1794 (1968).

28.M. L. Cohen, "Superconductivity in low-carrier-density systems: Degenerate semiconductors," in Superconductivity, ed. R. D. Parks, (Marcel Dekker, Inc., New York,1969), p.615.

29.P. B. Allen and M. L. Cohen, "Carrier-concentration-dependent superconductivity in SnTe and GeTe," Phys. Rev. 177, 704 (1969).

30.C. S. Koonce and M. L. Cohen, "Theory of superconducting semiconductors and semi-metals," Phys. Rev. 177, 707 (1969).

31.M. Y. Au-Yang and M. L. Cohen, "Electronic structure and optical properties of SnS2 and SnSe2," Phys. Rev. 178, 1279 (1969).

32.M. Y. Au-Yang and M. L. Cohen, "Electronic structure and optical properties of Mg2Si, Mg2Ge, and Mg2Sn," Phys. Rev. 178, 1358 (1969).

33.Y. Petroff, M. Balkanski, J. P. Walter, and M. L. Cohen, "The optical properties and electronic band structure of zinc selenide," Solid State Comm. 7, 459 (1969).

34.Y. W. Tung and M. L. Cohen, "Relativistic band structure and electronic properties of SnTe, GeTe, and PbTe," Phys. Rev. 180, 823 (1969). Erratum: Phys. Rev. B 2, 1216 (1970)

35.P. B. Allen and M. L. Cohen, "Theoretical superconducting transition temperatures and the possibility of superconductivity in Mg," Solid State Comm. 7, 677 (1969).

36.Y. W. Tung and M. L. Cohen, "The fundamental energy gap in SnTe and PbTe," Phys. Lett. 29A, 236 (1969).

37.J. P. Walter and M. L. Cohen, "Calculation of the reflectivity, modulated reflectivity, and band structures of GaAs, GaP, ZnSe, and ZnS," Phys. Rev. 183, 763 (1969).[Erratum: Phys. Rev. B 1, 942 (1970)]

38.C. Y. Fong and M. L. Cohen, "Pseudopotential calculation of the optical constants of NaCl and KCl," Phys. Rev. 185, 1168 (1969).

39.P. B. Allen and M. L. Cohen, "Pseudopotential calculation of the mass enhancement and superconducting transition temperature of simple metals," Phys. Rev. 187, 525 (1969).

40.J. P. Walter, R. R. L. Zucca, M. l. Cohen, and Y. R. Shen, "Temperature dependence of the wavelength modulation spectra of GaAs," Phys. Rev. Lett. 24, 102 (1970).

41.C. Y. Fong and M. L. Cohen, "Energy band structure of copper by the empirical pseudopotential method," Phys. Rev. Lett. 24, 306 (1970).

42.P. B. Allen and M. L. Cohen, "Calculation of the temperature dependence of the electron-phonon mass enhancement," Phys. Rev. B 1, 1329 (1970).

43.R. N. Cahn and M. L. Cohen, "A local pseudopotential model for GaSb: Electronic and optical properties," Phys. Rev. B 1, 2569 (1970).

44.J. P. Walter, M. L. Cohen, Y. Petroff, and M. Balkanski, "Calculated and measured reflectivity of ZnTe and ZnSe," Phys. Rev. B 1, 2661 (1970).

45.R. R. L. Zucca, J. P. Walter, Y. R. Shen, and M. L. Cohen, "Wavelength modulation spectra of GaAs and silicon," Solid State Comm. 8, 627 (1970).

46.M. L. Cohen and V. Heine, "The fitting of pseudopotentials to experimental data and their subsequent application," in Solid State Physics, Vol.24, eds. H. Ehrenreich, F. Seitz, and D. Turnbull (Academic Press, New York, 1970), p.37.

47.J. P. Walter and M. L. Cohen, "Wave-vector-dependent dielectric function for Si, Ge, GaAs, and ZnSe," Phys. Rev. B 2, 1821 (1970).

48.L. A. Hemstreet, Jr., C. Y. Fong, and M. L. Cohen, "Calculation of the band structure and optical constants of diamond using the non-local pseudopotential method," Phys. Rev. B 2, 2054 (1970).

49.C. Y. Fong, M. L. Cohen, R. R. L. Zucca, J. Stokes, and Y. R. Shen, "Wavelength modulation spectrum of copper," Phys. Rev. Lett. 25, 1486 (1970).

50.T. L. Thorp, B. B. Triplett, W. D. Brewer, M. L. Cohen, N. E. Phillips, D. A. Shirley, J. E. Templeton, R. W. Stark, and P. H. Schmidt, "Search for superconductivity in lithium and magnesium," J. Low Temp. Phys. 3, 589 (1970).

51.J. P. Walter and M. L. Cohen, "Electronic charge densities in semiconductors," Phys. Rev. Lett. 26, 17 (1971).

52.Y. W. Tsang and M. L. Cohen, "Calculation of the temperature dependence of the energy gaps in PbTe and SnTe," Phys. Rev. B 3, 1254 (1971).

53.Y. W. Tsang and M. L. Cohen, "Band ordering in PbTe," Solid State Comm. 9, 261 (1971).

54.J. P. Walter and M. L. Cohen, "Pseudopotential calculations of electronic charge densities in seven semiconductors," Phys. Rev. B 4, 1877 (1971).

55.M. L. Cohen and Y. W. Tsang, "Theory of electronic structure of some IV-VI semiconductors," J. Chem. Phys. Solids 32 (Supplement 1), 303 (1971).

56.M. L. Cohen and P. W. Anderson, "Comments on the maximum superconducting transition temperature," in Superconductivity in d- and f-band Metals, ed. D. H. Douglass (AIP, New York,1972), p.17.

57.J. Stokes, Y. R. Shen, Y. W. Tsang, M. L. Cohen and C. Y. Fong, "Wavelength modulation spectra of single crystals of silver and gold," Phys. Lett. 38A, 347 (1972).

58.C. Y. Fong and M. L. Cohen, "Electronic energy band structure of SnS2 and SnSe2," Phys. Rev. B 5, 3095 (1972).[Erratum: Phys. Rev. B 7, 4748 (1973)]

59.J. P. Walter and M. L. Cohen, "Frequency and wave-vector-dependent dielectric function for silicon," Phys. Rev. B 5, 3101 (1972).

60.D. J. Chadi, J. P. Walter, M. L. Cohen, Y. Petroff and M. Balkanski, "Reflectivities and electronic band structures of CdTe and HgTe," Phys. Rev. B 5, 3058 (1972).

61.Y. W. Tsang and M. L. Cohen, "Electronic charge density in PbTe," Solid State Comm. 10, 871 (1972).

62.C. Varea de Alvarez, J. P. Walter, M. L. Cohen, J. Stokes, and Y. R. Shen, "Wavelength-modulation spectra and band structures of InP and GaP," Phys. Rev. B 6, 1412 (1972).

63.J. D. Joannopoulos and M. L. Cohen, "Comparison of the electronic structure of amorphous and crystalline polytypes of Ge," Solid State Comm. 11, 549 (1972).

64.J. D. Joannopoulos and M. L. Cohen, "Electronic structure of crystalline polytypes and amorphous Si," Phys. Lett. 41A, 71 (1972).

65.M. L. Cohen, "Calculations of the electronic structure of semiconductors," in Proceedings of the 11th International Conference on the Physics of Semiconductors (Polish Scientific Publishers, Warsaw, Poland, 1972) p. 731.

66.R. A. Pollak, L. Ley, S. Kowalczyk, D. A. Shirley, J. D. Joannopoulos, D. J. Chadi, and M. L. Cohen, "X-ray photoemission valence-band spectra and theoretical valence-band densities of states for Ge, GaAs, and ZnSe," Phys. Rev. Lett. 29, 1103 (1972).

67.C. Y. Fong and M. L. Cohen, "Pseudopotential calculations of the electronic structure of a transition metal compound--niobium nitride," Phys. Rev. B 6, 3633 (1972).

68.S. J. Sramek and M. L. Cohen, "Frequency and wave-vector-dependent dielectric function for Ge, GaAs, and ZnSe," Phys. Rev. B 6, 3800 (1972).

69.P. B. Allen and M. L. Cohen, "Superconductivity and phonon softening," Phys. Rev. Lett. 29, 1593 (1972).

70.D. J. Chadi and M. L. Cohen, "Electronic structure of Hg1-xCdxTe alloys and charge density calculations using representative k-points," Phys. Rev. B 7, 692 (1973).

71.C. Varea de Alvarez, J. P. Walter, R. W. Boyd, and M. L. Cohen, "Calculated band structures, optical constants, and electronic charge densities for InAs and InSb," J. Chem. Phys. Solids 34, 337 (1973).

72.J. P. Walter, C. Y. Fong, and M. L. Cohen, "Electronic charge density of aluminum," Solid State Comm. 12, 303 (1973).

73.W. D. Grobman, D. E. Eastman, and M. L. Cohen, "A relationship between photoemission-determined valence band gaps in semiconductors and insulators and ionicity parameters," Phys. Lett. 43A, 49 (1973).

74.M. L. Cohen, "Electronic charge densities in semiconductors," Science 179, 1189 (1973).

75.J. D. Joannopoulos and M. L. Cohen, "Electronic properties of complex crystalline and amorphous phases of Ge and Si I: Density of states and band structures," Phys. Rev. B 7, 2644 (1973).

76.J. D. Joannopoulos and M. L. Cohen, "Electronic charge densities for ZnS in the wurtzite and zincblende structures," J. Phys. C 6, 1572 (1973).

77.C. Varea de Alvarez and M. L. Cohen, "Calculated band structure and reflectivity spectra of ZnGeP2," Phys. Rev. Lett. 30, 979 (1973).

78.C. Y. Fong and M. L. Cohen, "Pseudopotential calculation of the electronic structure of a transition metal-niobium," Phys. Lett. 44A, 375 (1973).

79.S. E. Kohn, P. Y. Yu, Y. Petroff, Y. R. Shen, Y. Tsang, and M. L. Cohen, "Electronic band structure and optical properties of PbTe, PbSe and PbS," Phys. Rev. B 8, 1477 (1973).

80.C. Varea de Alvarez and M. L. Cohen, "Model pseudopotential calculations of the electronic and bonding properties of group-IV elements," Phys. Rev. B 8, 1603 (1973).

81.J. D. Joannopoulos and M. L. Cohen, "Electronic properties of complex crystalline and amorphous phases of Ge and Si II: Band structure and optical properties," Phys. Rev. B 8, 2733 (1973).

82.J. R. Chelikowsky, D. J. Chadi, and M. L. Cohen, "Calculated valence-band densities of states and photoemission spectra of diamond and zincblende semiconductors," Phys. Rev. B 8, 2786 (1973).

83.D. J. Chadi and M. L. Cohen, "Approximate Wannier functions," Solid State Comm. 13, 1007 (1973).

84.J. D. Joannopoulos and M. L. Cohen, "New insight into the optical properties of amorphous Ge and Si," Solid State Comm. 13, 1115 (1973).

85.J. R. Chelikowsky and M. L. Cohen, "High resolution band structure and the E2 peak in Ge," Phys. Rev. Lett. 31, 1582 (1973).

86.D. J. Chadi, M. L. Cohen, and W. D. Grobman, "Atomic pseudopotentials and the ionicity parameter of Phillips and Van Vechten," Phys. Rev. B 8, 5587 (1973).

87.D. J. Chadi and M. L. Cohen, "Special points in the Brillouin zone," Phys. Rev. B 8, 5747 (1973).

88.C. Y. Fong and M. L. Cohen, "Electronic charge densities for two layer semiconductors--SnS2 and SnSe2," J. Phys. C 7, 107 (1974).

89.C. Varea de Alvarez and M. L. Cohen, "Pressure coefficients for band gaps in silicon," Solid State Comm. 14, 317 (1974).

90.J. R. Chelikowsky and M. L. Cohen, "Electronic structure of GaAs," Phys. Rev. Lett. 32, 674 (1974).

91.J. R. Chelikowsky and M. L. Cohen, "Calculated valence band density of states and reflectivity for ZnSe" Phys. Lett. 47A, 7 (1974).

92.C. Y. Fong and M. L. Cohen, "Band structure and charge density of 2H-NbSe2," Phys. Rev. Lett. 32, 720 (1974).

93.D. J. Chadi and M. L. Cohen, "Analytic expression for the electronic charge density distribution in diamond structure crystals," Phys. Status Solidi (b) 62, 235 (1974).

94.Y. W. Tsang and M. L. Cohen, "Pseudopotential study of bonding in the zinc-blende and rocksalt structures," Phys. Rev. B 9, 3541 (1974).

95.R. P. Gupta, S. K. Sinha, J. P. Walter, and M. L. Cohen, "Dielectric functions and phonon spectrum of grey tin," Solid State Comm. 14, 1313 (1974).

96.M. Schlüter, J. D. Joannopoulos, and M. L. Cohen, "New interpretation of photoemission measurements on trigonal Se and Te," Phys. Rev. Lett. 33, 89 (1974). Erratum: Phys. Rev. Lett. 33, 337 (1974).

97.D. J. Chadi and M. L. Cohen, "Electronic band structures and charge densities of NbC and NbN," Phys. Rev. B 10, 496 (1974).

98.C. Varea de Alvarez, M. L.Cohen, L. Ley, S. P. Kowalczyk, F. R. McFeely, D. A. Shirley, and R. W. Grant, "Electronic density of states and bonding in chalcopyrite-type semiconductors," Phys. Rev. B 10, 596 (1974).

99.J. D. Joannopoulos and M. L. Cohen, "Electronic density of states of amorphous III-V semiconductors," Solid State Comm. 15, 105 (1974).

100. F. Yndurain, J. D. Joannopoulos, M. L. Cohen, and L. M. Falicov, "New theoretical method to study densities of states of tetrahedrally coordinated solids," Solid State Comm. 15, 617 (1974).

101.J. D. Joannopoulos and M. L. Cohen, "Disorder and the electronic density of states of amorphous binary compounds," in Tetrahedrally Bonded Amorphous Semiconductors, eds. M. H. Brodsky, S. Kirkpatrick, and D. Weaire (AIP, New York, 1974), p.85.

102.J. D. Joannopoulos, F. Yndurain, L. M. Falicov and M. L. Cohen, "Characterization of amorphous systems using local configurations," in Tetrahedrally Bonded Amorphous Semiconductors, eds. M. H. Brodsky, S. Kirkpatrick, and D. Weaire (AIP, New York, 1974), p.167.

103.P. B. Allen and M. L. Cohen, "Superconductivity and anomalous phonon dispersion in TaC," in Proceedings of the 13th International Conference on Low Temperature Physics, Vol. 3, eds. K. D. Timmerhaus and W. O'Sullivan (Plenum Press, New York, 1974), p.619.

104.J. D. Joannopoulos and M. L. Cohen, "Effects of disorder on the electronic density of states of III-V compounds," Phys. Rev. B 10, 1545 (1974).

105.M. Schlüter, J. D. Joannopoulos, M. L. Cohen, L. Ley, S. P. Kowalczyk, R. A. Pollak, and D. A. Shirley, "The structural nature of amorphous Se and Te," Solid State Comm. 15, 1007 (1974).

106.J. R. Chelikowsky and M. L. Cohen, "Electronic charge densities and the temperature dependence of the forbidden (222) reflection in silicon and germanium," Phys. Rev. Lett. 33, 1339 (1974).

107.D. J. Chadi and M. L. Cohen, "Correlation between the static dielectric constant and the minimum energy gap," Phys. Lett. 49A, 381 (1974).

108.J. D. Joannopoulos and M. L. Cohen, "New surface states of an unrelaxed (110) surface," Phys. Lett. 49A, 391 (1974).

109.S. G. Louie and M. L. Cohen, "Electronic structure of cesium under pressure," Phys. Rev. B 10, 3237 (1974).

110.J. D. Joannopoulos and M. L. Cohen, "Intrinsic surface states of (110) surfaces of group IV and III-V semiconductors," Phys. Rev. B 10, 5075 (1974).

111.J. R. Chelikowsky and M. L. Cohen, "Electronic structure of silicon," Phys. Rev. B 10, 5095 (1974).

112.C. Varea de Alvarez, M. L. Cohen, S. E. Kohn, Y. Petroff, and Y. R. Shen, "Calculated and measured reflectivity of ZnGeP2," Phys. Rev. B 10, 5175 (1974).

113.J. D. Joannopoulos, M. Schlüter, and M. L. Cohen, "Electronic densities of states of amorphous and trigonal Se and Te," in Proceedings of the 12th International Conference on the Physics of Semiconductors (Fed. Rep. Germany, 1974), p.1304

114.S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Local field effects in the optical spectrum of silicon," Phys. Rev. Lett. 34, 155 (1975).

115.G. Martinez, M. Schlüter, and M.L. Cohen, "Electronic structure of PbSe and PbTe I: Band structure, densities of states and effective masses," Phys. Rev. B 11, 651 (1975).

116.G. Martinez, M. Schlüter, and M.L. Cohen, "Electronic structure of PbSe and PbTe II: Optical properties," Phys. Rev. B 11, 660 (1975).

117.D. J. Chadi and M. L. Cohen, "Intrinsic (111) surface states of Ge, GeAs and ZnSe," Phys. Rev. B 11, 732 (1975).

118.D. J. Chadi and M. L. Cohen, "Tight-binding calculations of (111) surface densities of states of Ge and GaAs," Solid State Comm. 16, 691 (1975).

119.J. D. Joannopoulos, M. Schlüter, and M. L. Cohen, "Electronic structure of trigonal and amorphous Se and Te," Phys. Rev. B 11, 2186 (1975).

120.D. J. Chadi and M. L. Cohen, "Tight-binding calculations of the valence bands of diamond and zincblende crystals," Phys. Status Solidi (b) 68, 405 (1975).

121.C. Y. Fong, J. P. Walter, and M. L. Cohen, "Comparison of band structures and charge distributions of copper and silver," Phys. Rev. B 11, 2759 (1975).

122.M. Schlüter, G. Martinez, and M. L. Cohen, "Electronic charge densities in PbSe and PbTe," Phys. Rev. B 11, 3808 (1975).

123.C. Y. Fong and D. J. Chadi, and M. L. Cohen, "An alternate form of the non-local p-potential in the empirical pseudopotential method," Phys. Rev. B 11, 4063 (1975). Erratum: Phys. Rev. B 12, 4584 (1975).

124.M. Schlüter, J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Self-consistent pseudopotential calculations on Si(111) unreconstructed and (2x1) reconstructed surfaces," Phys. Rev. Lett. 34, 1385 (1975).

125.M. Schlüter, J. R. Chelikowsky, and M. L. Cohen, "The electronic configuration of Si(111) (21) reconstructed surfaces," Phys. Lett. 53A, 217 (1975).

126.G. Martinez, M. Schlüter, M. L. Cohen, R. Pinchaux, P. Thiry, D. Dagneaux, and Y. Petroff, "Synchrotron radiation measurements and calculation of core to conduction level transitions in lead chalcogenides," Solid State Comm. 17, 5 (1975).

127.M. Schlüter, G. Martinez, and M. L. Cohen, "Pressure and temperature dependence of electronic energy levels in PbSe and PbTe," Phys. Rev. B 12, 650 (1975).

128.S. G. Louie and M. L. Cohen, "Self-consistent pseudopotential calculation for a metal-semiconductor interface," Phys. Rev. Lett. 35, 866 (1975). Erratum: Phys. Rev. Lett. 36, 173 (1976).

129.M. Schlüter, J. R. Chelikowsky, and M. L. Cohen, "Electronic properties of polymeric sulfur nitride," Phys. Rev. Lett. 35, 869 (1975). Erratum: Phys. Rev. Lett. 36, 452 (1976).

130.J. R. Chelikowsky, M. Schlüter, S. G. Louie, and M. L. Cohen, "Self-consistent pseudopotential calculation for the (111) surface of aluminum," Solid State Comm. 17, 1103 (1975).

131.M. Schlüter, J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Self-consistent pseudopotential calculations for Si(111) surfaces: Unreconstructed (11) and reconstructed (21) model structures," Phys. Rev. B 12, 4200 (1975).

132.G. Martinez, M. L. Cohen, and M. Schlüter, "Energy-level parities at L in PbTe," Phys. Rev. Lett. 35, 1746 (1975).

133.M. L. Cohen, M. Schlüter, J. R. Chelikowsky, and S. G. Louie, "Self-consistent pseudopotential method for localized configurations: Molecules," Phys. Rev. B 12, 5575 (1975).

134.J. R. Chelikowsky and M. L. Cohen, "Pseudopotential valence charge densities in homopolar and heteropolar semiconductors," Phys. Rev. Lett. 36, 229 (1976).

135.J. R. Chelikowsky and M. L. Cohen, "(110) surface states in III-V and II-VI zincblende semiconductors," Phys. Rev. B 13, 826 (1976).

136.S. G. Louie, M. Schlüter, J. R. Chelikowsky, and M. L. Cohen, "Self-consistent electronic states for reconstructed Si vacancy model," Phys. Rev. B 13, 1654 (1976).

137.S. G. Louie and M. L. Cohen, "Electronic structure of a metal-semiconductor interface," Phys. Rev. B 13, 2461 (1976).

138.J. D. Joannopoulos and M. L. Cohen, "Theory of short-range order and disorder in tetrahedrally bonded semiconductors," in Solid State Physics, Vol. 31, eds. H. Ehrenreich, F. Seitz, and D. Turnbull (Academic Press, New York, 1976), p.71.

139.M. Schlüter, J. Camassel, S. Kohn, J. P. Voitchosky, Y. R. Shen, and M. L. Cohen, "Optical properties of GaSe and GaSxSe1-x mixed crystals," Phys. Rev. B 13, 3534 (1976).

140.M. Schlüter and M. L. Cohen, "Local density of states for a relaxed Si(111) surface," Phys. Lett. 56A, 419 (1976).

141.J. Camassel, M. Schlüter, S. Kohn, J. P. Voitchovsky, Y. R. Shen, and M. L. Cohen, "Wavelength modulation spectra and electronic structure of SnS2 and SnSe2," Phys. Status Solidi (b) 75, 303 (1976).

142.M. Schlüter and M. L. Cohen, "Valence band density of states and chemical bonding for several non-transition-metal layer compounds: SnSe2, PbI2, BiI3, and GaSe," Phys. Rev. B 14, 424 (1976).

143.M. Schlüter, K. M. Ho, and M. L. Cohen, "Step-dependent surface states on silicon (111)," Phys. Rev. B 14, 550 (1976).

144.J. R. Chelikowsky and M. L. Cohen, "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zincblende semiconductors," Phys. Rev. B 14, 556 (1976). Erratum: Phys. Rev. B 30, 4828 (1984).

145.M. Schlüter, K. M. Ho, and M. L. Cohen, "Step-dependent surface states on Si(111)," J. Vac. Sci. Technol. 13, 779 (1976).

146.S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, "Theory of semiconductor surface states and metal-semiconductor interfaces," J. Vac. Sci. Technol. 13, 790 (1976).

147.J. S-Y. Wang, M. Schlüter, and M. L. Cohen, "The electronic structure of AgCl," Phys. Status Solidi (b) 77, 295 (1976).

148.S. G. Louie, K. M. Ho, J. R. Chelikowsky, and M. L. Cohen, "Surface states on the (001) surface of Nb," Phys. Rev. Lett. 37, 1289 (1976).

149.J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Surface states and metal overlayers on the (110) surface of GaAs," Solid State Comm. 20, 641 (1976).

150.J. R. Chelikowsky, S. G. Louie, and M. L. Cohen, "Relaxation effects on the (110) surface of GaAs," Phys. Rev. B 14, 4724 (1976).

151.P. Thiry, Y. Petroff, R. Pinchaux, J. R. Chelikowsky, and M. L. Cohen, "Electron-hole interaction of the d core levels in III-V semiconductors," Solid State Comm. 20, 1107 (1976).

152.M. Schlüter, J. E. Rowe, and G. Margaritondo, K. M. Ho, and M. L. Cohen, "Chemisorption-site geometry from polarized photoemission: Si(111)Cl and Ge(111)Cl," Phys. Rev. Lett. 37, 1632 (1976).

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