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Background Statement for SEMI Draft Document 6039

REAPPROVAL OF SEMI PV31-0212 TEST METHOD FOR SPECTRALLY RESOLVED REFLECTIVE AND TRANSMISSIVE HAZE OF TRANSPARENT CONDUCTING OXIDE (TCO) FILMS FOR PV APPLICATION

Notice: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.

Notice: Recipients of this Document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, “patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.

Background

Per SEMI Regulations 8.9.1, the Originating TC Chapter shall review its Standards and decide whether to ballot the Standards for reapproval, revision, replacement, or withdrawal by the end of the fifth year after their latest publication or reapproval dates.

The NA PV Materials TC Chapter reviewed and recommended to issue for reapproval ballot.

Per SEMI Procedure Manual (NOTE 19), a reapproval Letter Ballot should include the Purpose, Scope, Limitations, and Terminology sections, along with the full text of any paragraph in which editorial updates are being made.

Voter requests for access to the full Standard or Safety Guideline must be made at least three business days before the voting deadline. Late requests may not be honored.

Review and Adjudication Information

Task Force Review / Committee Adjudication
Group: / International PV Analytical Test Methods, Metrology, and Inspection TF / PV Materials NA TC Chapter
Date: / Nov 9, 2016 / Nov 9, 2016
Time & Timezone: / 9:00-11:00 AM PDT / 11:00 AM -12:00 PM PDT
Location: / SEMI HQ / SEMI HQ
City, State/Country: / San Jose, CA/USA / San Jose, CA/USA
Leader(s)/Authors: / Hugh Gotts (Air Liquide) / Hugh Gotts (Air Liquide)
Standards Staff: / Kevin Nguyen ( ) / Kevin Nguyen ( )

This meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.

Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will not be able to attend these meetings in person but would like to participate by telephone/web, please contact Standards staff.

Check www.semi.org/standards on calendar of event for the latest meeting schedule.

SEMI Draft Document 6039

REAPPROVAL OF SEMI PV31-0212 TEST METHOD FOR SPECTRALLY RESOLVED REFLECTIVE AND TRANSMISSIVE HAZE OF TRANSPARENT CONDUCTING OXIDE (TCO) FILMS FOR PV APPLICATION

1 Purpose

1.1 Transparent conducting oxide (TCO) films used in the photovoltaic industry are textured in order to optimize light absorption and maximize cell efficiency. Frequently, haze measurements are used to characterize such films. The required texture usually is not well defined by a single haze result because the relative amounts of low and high frequency roughness on the surface can both be important. Therefore the haze is frequently determined for a spectrum of source wavelengths. Then the haze values can often be correlated with useful properties of the material.

1.2 In the PV field, haze is taken as the total integrated reflective or transmissive scatter from the surface of the sample. The basics of this measurement are covered in SEMIMF1048.

2 Scope

2.1 This Test Method extends SEMIMF1048 and SEMIPV15 to measurements of reflective and transmissive haze as a function of source wavelength on TCO films used in the PV industry.

2.2 Reflective haze can be obtained on TCO films deposited on amorphous or other types of silicon.

2.3 Transmissive haze can be obtained in a similar fashion on TCO films deposited on transparent materials, such as glass.

2.4 Haze is determined as a function of the incident wavelength of the source beam.

2.5 Haze is also determined as a function of the incident angle between the source beam and the film surface normal.

2.6 If desired, it can also be determined at different positions on the sample film.

NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.

3 Limitations

3.1 Measured haze (or TIS) values change with measurement parameters such as the source wavelength, incident angle, polarization, and scatter collection regions. As a result comparing haze values found for samples where these parameters were different is meaningless. Thus, these parameters need to be reported directly, or implied by identifying the measurement system used for the tests.

3.2 Variations in detector response as a function of the angle of incidence can affect the precision of the measurement.

3.3 Lack of proper calibration and adjustment of the two detectors makes the ratio of their readings meaningless.

3.4 Defects, such as scratches or pits, that are not characteristic of the surface finish, or contaminants on the surface can produce scattering that is not characteristic of the texture of the surface.

3.5 Stray background radiation affects the precision of measurement.

3.6 Detector offset voltages affect the precision of measurement.

4 Referenced Standards and Documents

4.1 SEMI Standards and Safety Guidelines

SEMI M59 — Terminology for Silicon Technology

SEMI MF1048 — Test Method for Measuring Reflective Total Integrated Scatter

SEMI PV15 — Guide for Defining Conditions for Angle Resolved Light Scatter Measurements to Monitor the Surface Roughness and Texture of PV Materials

4.2 ANSI Standards[1]

ANSI Z136.1 — American National Standard for Safe Use of Lasers

NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

5 Terminology

5.1 Acronyms, terms, and symbols related to silicon technology, including most of those in this Test Method, are listed and defined in SEMIM59.

5.2 Other Acronyms Used in this Test Method

5.2.1 TCO — transparent conducting oxide

NOTICE: SEMI makes no warranties or representations as to the suitability of the standard(s) set forth herein for any particular application. The determination of the suitability of the standard(s) is solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant literature respecting any materials or equipment mentioned herein. These standards are subject to change without notice.

By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and the risk of infringement of such rights are entirely their own responsibility.

This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.

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[1] American National Standards Institute, 25 West 43rd Street, New York, NY 10036, USA; Telephone: 212.642.4900, Fax: 212.398.0023, http://www.ansi.org