Carbon Nanotube Welding Through Ar

Supplemental Information ─ Simulation of

Carbon Nanotube Welding through Ar

Bombardment

Mustafa U. Kucukkal** and Steven J. Stuart*

**Department of Chemistry, Washington State University, Pullman, WA 99164

*Department of Chemistry, Clemson University, Clemson, SC 29634

October 12, 2015

Figure S1 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for (10,10) SWCNTs under bombardment by Ar having various impact energies with 8 ps annealing at 3000 K. Error bars represent standard error of mean.
Figure S2 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for heterogeneous SWCNTs under bombardment by Ar having various impact energies with 8 ps annealing at 3000 K. Error bars represent standard error of mean.
Figure S3 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9), (10,10) and heterogeneous junctions under bombardment by 500 eV Ar annealed at 3000 K for 8ps. Error bars represent standard error of mean.
Figure S4 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9), (10,10) and heterogeneous junctions under bombardment by 1000 eV Ar annealed at 3000 K for 8ps. Error bars represent standard error of mean.
Figure S5 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9), (10,10) and heterogeneous junctions under bombardment by 1500 eV Ar annealed at 3000 K for 8ps. Error bars represent standard error of mean.
Figure S6 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9), (10,10) and heterogeneous junctions under bombardment by 2000 eV Ar annealed at 3000 K for 8ps. Error bars represent standard error of mean.
Figure S7 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9) junctions under bombardment by 500 eV Ar annealed at different temperatures for 8ps. Error bars represent standard error of mean.
Figure S8 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9) junctions under bombardment by 1000 eV Ar annealed at different temperatures for 8ps. Error bars represent standard error of mean.
Figure S9 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9) junctions under bombardment by 1500 eV Ar annealed at different temperatures for 8ps. Error bars represent standard error of mean.
Figure S10 Evolution of junction quality (R), the number of junctions (ncl) and the number of sp2 C atoms lost ) with fluence for homogenous (11,9) junctions under bombardment by 2000 eV Ar annealed at different temperatures for 8ps. Error bars represent standard error of mean.