Jesús A. del Alamo
Donner Professor, MacVicar Faculty Fellow
Department of Electrical Engineering Computer Science
Compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. Nanometer-scale III-V compound semiconductor transistors for future digital applications. Reliability of compound semiconductor transistors. Technology and pedagogy of online laboratories for engineering education.
39-567a; 253-4764;
Postdoctoral Associates
Alon Vardy, MIT-Technion Fellow
Graduate Students
Alex Guo, EECS, NDSEG Fellowship
Luke Guo, EECS, NSF Fellow
Donghyun Jin, EECS, Samsung Fellow
Jianqiang Lin, EECS
Wenjie Lu, EECS
Shireen Warnock, EECS
Yufei Wu, EECS
Xin Zhao, DMSE
UNDERGRaduate Students
Rose Abramson, EECS
Visitors
Jose M. Lopez Villegas, U. Barcelona
Support Staff
Elizabeth Kubicki, Admin. Asst. II
Selected Publications
J. A. del Alamo, “Recent progress in understanding the DC and RF reliability of GaN high-electron mobility transistors,” Invited talk at Materials Research Society Spring Meeting, April 9-13, 2012.
J. Lin, T.-W. Kim, D. A. Antoniadis, J. A. del Alamo, “A Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process,” Applied Physics Express, vol. 5, p. 064002, May 16, 2012.
D. Jin, J. A. del Alamo, “Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs,” 24th IEEE International Symposium on Power Semiconductor Devices and ICs, June 3-7, 2012, pp. 333-346.
T.-W. Kim, R. J. W. Hill, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. Kirsch, R. Jammy, “InAs Quantum-Well MOSFET (Lg=100 nm) with Record High gm, fT and fmax,” 2012 Symposium on VLSI Technology, June 12-15, 2012, pp. 179-180.
J. A. del Alamo, D.-H. Kim, “InAs High-Electron Mobility Transistors on the Path to THz Operation,” Invited paper at International Conference on Solid State Devices and Materials, Sept. 25-27, 2012.
J. A. del Alamo, “Nanometer-Scale III-V CMOS,” Short Course on the Future of Semiconductor Devices and Integrated Circuits at 34th IEEE Compound Semiconductor IC Symposium, Oct. 14, 2012.
C.-H. Lin, T. A. Merz, D. R. Doutt, J. Joh, J. A. del Alamo, U. K. Mishra, L. J. Brillson, ”Strain and temperature dependence of defect formation at AlGaN/GaN high electron mobility transistors on a nanometer scale,” IEEE Transactions on Electron Devices, vol. 59, No. 10, pp. 2667-2674, Oct.2012.
J. Lin, D. A. Antoniadis, J. A. del Alamo, “Sub-30 nm In As Quantum-Well MOSFETs with Self-Aligned Metal Contacts and Sub-1 nm EOT HfO2 Insulator,” IEEE International Electron Devices Meeting, Dec. 10-12, 2012, pp. 757-760.
T.-W. Kim , R. J. W. Hill, D. Kim, D.-H. Koh, R. Lee, M. H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K. M. Lau, C. Hobbs, P. D. Kirsch, R. Jammy, “ETW-QW InAs MOSFETs with Scaled Body for Improved Electrostatics,” IEEE International Electron Devices Meeting, CA, Dec.10-12, 2012, pp. 765-768.
D. Jin, J. A. del Alamo, ”Impact of high-power stress on dynamic ON resistance of high-voltage GaN HEMTs,” Microelectronics Reliability, vol. 52, pp. 2875-2879 (2012).
D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. ±Urteaga, B. Brar, T.-W. Kim, ”Lg=60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator,” Applied Physics Letters, vol. 101, p. 223507, 2012.
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J.A. del Alamo, theses awarded (July 2016-June 2017)
Degree / Student Name / Department / Thesis title / Thesis date /S.B. / Lastname, Firstname / EECS / Title 1 (tentative) / June 2017 (tentative) /
S.M. and M.Eng. / Lastname, Firstname / EECS / Title 2 (tentative) / June 2017 (tentative) /
/ Lastname, Firstname / DMSE / Title 3 / November 2016 /
/ Lastname, Firstname / EECS / Title 4 / August 2016 /
/ Lastname, Firstname / EECS / Title 5 / September 2016 /
/ Lastname, Firstname / EECS / Title 6 / September 2016 /
Ph.D. / Lastname, Firstname / MechE / Title 7 (tentative) / May 2017 (tentative) /
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