(1) *S. Miyazaki, K. Makihara and M. Ikeda, Charge Strage Characteristics of Hybrid Nanodots

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5 主要研究業績

(1)領域代表者

(1)  *S. Miyazaki, K. Makihara and M. Ikeda, “Charge Strage Characteristics of Hybrid Nanodots Floating Gate”, ECS Trans. 25, pp. 433-439, (2009). [Invited] (査読有)

(2)  *S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, “Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application”, Solid State Phenomena 154, pp. 95-100, (2009). [Invited] (査読有)

(3)  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and *S. Miyazaki, “Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories”, IEICE Trans. on Electronics E92-C, pp. 616-619, (2009). (査読有)

(4)  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and *S. Miyazaki, “Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics”, Jpn. J. Appl. Phys. 47, pp. 3099-3102, (2008). (査読有)

(5)  R. Matsumoto, M. Ikeda, S. Higashi and *S. Miyazaki, “Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases”, Jpn. J. Appl. Phys. 47, pp. 3103-3106, (2008). (査読有)

(6)  *S. Miyazaki, K. Makihara and M. Ikeda, “Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application”, Thin Solid Films 517, pp. 41-44, (2008). [Invited] (査読有)

(7)  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and *S. Miyazaki, “Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique”, Materials Science Forum 561-565, pp.1213-1216, (2007). (査読有)

(8)  *S. Miyazaki, M. Ikeda and K. Makihara, “Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application”, ECS Trans. 11, p.233-243, (2007). [Invited] (査読有)

(9)  J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and *S. Miyazaki, “Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique”, Thin Solid Films 508, pp. 190-194, (2006). (査読有)

(10)  *S. Miyazaki, M. Ikeda and K. Makihara, “Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories”, ECS Trans. 2, pp.157-164, (2006). [Invited] (査読有)

(2)各計画研究の研究代表者及び研究分担者

(1)  *M. Sakuraba, K. Sugawara and J. Murota, “Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures”, ECS Trans. 25, pp.229-236, (2009). [Invited] (査読有)

(2)  *M. Sakuraba and J. Murota, “Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100)” 1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09), Vigo, Spain, Sep. 20-23, 2009, pp.81-82. [Invited] (査読無)

(3)  T. Seo, K. Takahashi, M. Sakuraba and *J. Murota, “Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure”, Solid-State Electron 53, pp.912-915, (2009). (査読有)

(4)  T. Seo, M. Sakuraba and *J. Murota, “Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure”, Thin Solid Films 517, pp.110-112, (2008). (査読有)

(5)  T. Seo, M. Sakuraba and *J. Murota, “Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si1-xGex/Si(100) Heterostructure”, Appl. Surf. Sci. 254, pp.6265-6267, (2008). (査読有)

(6)  *M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota, “Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD”, Thin Solid Films 517, pp.10-13, (2008).

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[Invited] (査読有)

(7)  *M. Sakuraba, R. Ito, T. Seo and J. Murota, “Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100)”, ECS Trans. 11, pp.131-139 (2007). [Invited] (査読有)

(8)  *H. Iwai, “Roadmap for 22nm and beyond”, Microelectronic Engineering 86, pp. 1520-1528, (2009). (査読有)

(9)  H. Wong, K. Shiraishi, K. Kakushima and *H. Iwai, “Electronic Device Architectures for the Nano-CMOS Era: From Ultimate CMOS Scaling To Beyond CMOS Devices”, pp. 105-140, World Scientific Pub Co Inc, Editor: Simon Deleonibus, ISBN: 9814241288, (2009).

(10)  *H. Iwai, Y. Nishi, M. S. Shur and H. Wong, “Frontiers in Electronics”, World Scientific, ISBN: 9812568840, (2006).

(11)  *H. Iwai, “Logic LSI Technology Roadmap for 22nm and Beyond”, IPFA2009, July 8, Suzhou, China, (2009). [Keynote Speech]

(12)  *H. Iwai, “CMOS Technology after Reaching the Scale Limit”, IWJT-2008, pp.1-2, May 15-16, 2008, Shanghai, China. [Keynote Speech]

(13)  *H. Iwai, “Gate stack technology for next 25 years”, 4th International Symposium on Advanced Gate Stack Technology, 26 Sept. 2007, Dallas, Texas, USA, (2007). [Keynote Speech]

(14)  *H Iwai, “Nano CMOS Manufacturing”, The Conference on Optoelectronic and Microelectronic Materials and Devices, Dec. 6-8 2006, Perth, Australia, (2006). [Invited Plenary Talk]

(15)  W. Takeuchi, H. Sasaki, S. Kato, S. Takashima, M. Hiramatsu and *M. Hori, “Development of measurement technique for carbon atoms employing vacuum ultraviolet absorption spectroscopy with a microdischarge hollow-cathode lamp and its application to diagnostics of nanographene sheet material formation plasmas”, J. Appl. Phys. 105, 113305(6pages), (2009). (査読有)

(16)  T. Machino, W. Takeuchi, H. Kano, M. Hiramatsu and *M. Hori, “Synthesis of Platinum Nanoparticles on Two-Dimensional Carbon Nanostructures with an Ultrahigh Aspect Ratio Employing Supercritical Fluid Chemical Vapor Deposition Process”, Appl. Phys. Express 2, 025001(3pages), (2009). (査読有)

(17)  W. Takeuchi, M. Ura, M. Hiramatsu, Y. Tokuda, H. Kano and *M. Hori, “Electrical Conduction Control of Carbon Nanowalls”, Appl. Phys. Lett. 92, 213103(3pages), (2008). (査読有)

(18)  S. Kondo, K. Yamakawa, S. Den, H. Kano, M. Hiramatsu and *M. Hori, “Highly Reliable Growth Process of Carbon Nanowalls using Radical Injection Plasma-Enhanced Chemical Vapor Deposition”, J. Vac. Sci. Technol. B 26, pp.1294-1300, (2008). (査読有)

(19)  *M. Hori and T. Goto, “Insights into sticking of radicals on surfaces for smart plasma nano-processing”, Appl. Surf. Sci. 253, pp. 6657-6671, (2007). (査読有)

(20)  *M. Hori and T. Goto, “Progress of Radical Measurements in Plasmas for Semiconductor Processing”, Plasma Sources Sci. Technol. 15, pp. S74-S83, (2006). (査読有)

(21)  *M. Hori and M.Hiramatsu, “Carbon Nanowalls Formation by Raadical Controlled Plasma Process”, Advanced in Science and Technology 48, pp. 119-126, (2006). (査読有)

(22)  T. Sasada, Y. Nakakita, M. Takenaka and *S. Takagi, “Surface Orientation Dependence of Interface Properties of GeO2/Ge metal-oxide–semiconductor Structures Fabricated by Thermal Oxidation”, J. Appl. Phys. 106, 073716(7pages), (2009). (査読有)

(23)  Y. Zhao, M. Takenaka and *S. Takagi, “On Surface Roughness Scattering-limited Mobilities of Electrons and Holes in Biaxially-tensile Strained Si MOSFETs”, IEEE Electron Device Letters 30, pp. 987-989, (2009). (査読有)

(24)  Y. Zhao, M. Takenaka and *S. Takagi, “Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially-Strained Si MOSFETs”, IEEE Trans. Electron Devices 56, pp. 1152-1156, (2009). (査読有)

(25)  K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara and *S. Takagi, “Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide- semiconductor Field-Effect Transistors”, Jpn. J. Appl. Phys. 48, 04C050(5pages), (2009). (査読有)

(26)  H. Matsubara, T. Sasada, M. Takenaka and *S. Takagi, “Evidence of low interface trap density in GeO2/Ge

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Metal-Oxide-Semiconductor structures fabricated by thermal oxidation”, Appl. Phys. Lett. 93, 032104(3pages), (2008). (査読有)

(27)  *S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama, “Carrier-transport-enhanced channel CMOS for improved power consumption and performance”, IEEE Trans. Electron Devices 55, pp. 21-39, (2008). [Invited](査読有)

(28)  *S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama, “Gate Dielectric Formation and MIS Interface Characterization on Ge”, Microelectronic Engineering 84, pp. 2314–2319, (2007). [Invited] (査読有)

(29)  T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa and *S. Zaima, “Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates”, Solid-State Electronics 53, pp. 1198-1201, (2009). (査読有)

(30)  Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai and *S. Zaima, “Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers”, Jpn. J. Appl. Phys. 48, 04C130(4pages), (2009). (査読有)

(31)  *O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima, “Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System”, Jpn. J. Appl. Phys. 47, pp. 2402-2406, (2008). (査読有)

(32)  S. Takeuchi, Y. Shimura, O. Nakatsuka, *S. Zaima M. Ogawa and A. Sakai, “Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method”, Appl. Phys. Lett. 92, 231916(3pages), (2008). (査読有)

(33)  *O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa and S. Zaima, “Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system”, Microelectron. Eng. 83, pp. 2272-2276, (2006). (査読有)

(34)  *O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda and S. Zaima, “Improvement in NiSi/Si contact properties with C-implantation”, Microelectron. Eng. 82, pp. 479-484, (2005). (査読有)

(35)  Y. Ohara, T. Ueda, *A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata and H. Mori, “Microstructures in directly bonded Si substrates”, Solid-State Electron 53, pp. 837-840, (2009). (査読有)

(36)  E. Toyoda, *A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa and S. Zaima, “Mechanical properties and chemical reactions at the directly bonded Si-Si interface”, Jpn. J. Appl. Phys. 48, 011202(5pages), (2009). (査読有)

(37)  E. Toyoda, *A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka and S. Zaima, “Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates”, Jpn. J. Appl. Phys. 48, 021208(4pages), (2009). (査読有)

(38)  *A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima and S. Kimura, “Interface and defect control for group IV channel engineering”, ECS Trans. 16, pp. 687-698, (2008). [Invited] (査読有)

(39)  E. Toyoda, *A. Sakai, H. Isogai, T. Senda, K. Izunome, O. Nakatsuka, M. Ogawa and S. Zaima, “Characterization of bonding structures of directly bonded hybrid crystal orientation substrates”, Thin Solid Films 517, pp. 323-326, (2008). (査読有)

(40)  *A. Sakai, M. Sakashita, M. Ogawa and S. Zaima, “Rare-earth metal oxides and their silicate/ aluminates as future gate dielectric films”, ECS Trans. 6, pp. 99-118, (2007). [Invited] (査読有)

(41)  *M. Sato, T. Nabatame, T. Aoyama, Y. Nara and Y. Ohji, “Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics”, Jpn. J. Appl. Phys. 48, 05DD01(4), (2009). (査読有)

(42)  *W.W. Wang, K. Akiyma, W. Mizubayashi, T. Nabatame, H. Ota and A. Toriumi, “Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor”, J. Appl. Phys. 105, pp. 064108-064110,

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(2009). (査読有)

(43)  *T. Morooka, T. Matsuki, N. Mise, S. Kamiyama, T. Nabatame, T. Eimori, Y. Nara and Y. Ohji, “Improvement of Device Characteristics for TiN Gate p-Type Metal-Insulator-Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process”, Jpn. J. Appl. Phys. 48, pp. 04C010-15, (2009). (査読有)

(44)  *T. Nabatame, Y. Nunoshige, M. Kadoshima, H. Takaba, K Segawa, S. Kimura, H. Satake, H. Ota, T. Ohishi and A. Toriumi, “Changes in effective work function of HfxRu1-x alloy gate electrode”, Microelectronic Engineering 85, pp. 1524-1528, (2008). (査読有)

(45)  *W.W. Wang, W. Mizubayashi, H. Ota, K. Akiyama, M. Ikeda, T. Nabatame and A. Toriumi, “Systematic investigation on anomalous positive Vfb shift in Al-incorporated high-k gate stacks”, Appl. Phys. Lett. 92, 162901(3), (2008). (査読有)

(46)  *K. Iwamoto, Y. Kamimuta, A. Ogawa, Y. Watanabe, S. Migita, W. Mizubayashi, Y. Morita, M. Takahashi, H. Ota, T. Nabatame and A. Toriumi, “Experimental evidence for the flat-band voltage shift of high-k metal-oxide semiconductor devices due to the dipole formation at the high-k/SiO2 interface”, Appl. Phys. Lett. 92, pp. 132907-132910, (2008). (査読有)

(47)  *H. Nakashima, D. Wang and H. Yang, “Optical and Electrical Characterization of Defects in SiGe-on-Insulator” ECS Trans. 25, pp. 99-114, (2009). [Invited] (査読有)

(48)  H. Yang, D. Wang and *H. Nakashima, “Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricate during Ge condensation technique” Appl. Phys. Lett. 95, 122103(3pages), (2009). (査読有)

(49)  *H. Nakashima, D. Wang, Y. Sugimoto, Y. Suehiro, K. Yamamoto, M. Kajiwara, and K. Hirayama, “Electrical and structural evaluations of high-k gate dielectrics fabricated using plasma oxidation and the subsequent annealing for Hf/SiO2/Si structure”, Semicond. Sci. Technol. 23, 125020(6pages), (2008). (査読有)

(50)  H. Yang, D. Wang, H. Nakashima, H. Gao, K. Hirayama, K. Ikeda, S. Hata, and *H. Nakashima, “Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator”, Appl. Phys. Lett. 93, 072104(3pages), (2008). (査読有)

(51)  *D. Wang, H. Nakashima, J. Morioka and T. Kitamura, “Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition”, Appl. Phys. Lett. 91, 241918(3pages), (2007). (査読有)

(52)  Y. Sugimoto, M. Kajiwara, K. Yamamoto, Y. Suehiro, D. Wang and *H. Nakashima, “Effective work function modulation of TaN metal gate on HfO2 after post-metallization annealing”, Appl. Phys. Lett. 91, 112105(3pages), (2007). (査読有)

(53)  N. Yasuda, H. Murayama, Y. Fukuyama, J. Kim, *S. Kimura, K. Toriumi, Y. Tanaka, Y. Moritomo, Y. Kuroiwa, K. Kato, H. Tanaka and M. Takata, “X-ray diffractometry for the structure determination of a submicrometre single powder grain”, J. Synchrotron Rad. 13, pp. 352-357, (2009). (査読有)

(54)  V. Mizeikis, S. Kimura, N. V. Surovtsev, V. Jarutis, A. Saito, H. Misawa and *S. Juodkazis, “Formation of amorphous sapphire by a femtosecond laser pulse induced micro-explosion”, Appl. Surf. Sci. 255, pp. 9745-9749, (2009). (査読有)

(55)  Y. Ohara, T. Ueda, *A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata and H. Mori, “Microstructures in directly bonded Si substrates”, Solid-State Electronics 53, pp. 837-840, (2009). (査読有)

(56)  *木村滋, 田中義人, 山田昇,高田昌樹,“反応現象のX線ピンポイント構造計測 ―DVD材料の光記録現象をSPring-8で見る―”, 放射光22, pp. 231-240, (2009). (査読無)

(57)  Y. Fukuyama, N. Yasuda, J. Kim, H. Murayama, Y. Tanaka, S. Kimura, K. Kato, S. Kohara, Y. Moritomo, T. Matsunaga, R. Kojima, N. Yamada, H. Tanaka, T. Ohshima and *M. Takata, “Time-Resolved Investigation of Nanosecond Crystal Growth in Rapid-Phase-Change Materials: Correlation with the Recording Speed of Digital Versatile Disc Media”, Appl. Phys. Express 1, 045001(3pages), (2008). (査読有)